STP6N60M2 Specs and Replacement
Type Designator: STP6N60M2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.4 nS
Cossⓘ - Output Capacitance: 14 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220
STP6N60M2 substitution
- MOSFET ⓘ Cross-Reference Search
STP6N60M2 datasheet
stf6n60m2 stp6n60m2 stu6n60m2.pdf
STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) 3 2 Order codes ID 1 TJmax max IPAK 3 STF6N60M2 2 1 STP6N60M2 650 V 1.2 4.5 A TO-220FP TAB STU6N60M2 Extremely low gate charge 3 Lower RDS(on) x area vs previous... See More ⇒
stp6n60fi.pdf
STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V ... See More ⇒
stp6n60f.pdf
STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP6N60FI 600 V ... See More ⇒
stf6n65m2 stp6n65m2 stu6n65m2.pdf
STF6N65M2, STP6N65M2, STU6N65M2 N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max ID STF6N65M2 3 3 STP6N65M2 650 V 1.35 4 A 2 2 1 1 STU6N65M2 TO-220FP TO-220 TAB Extremely low gate charge Excellent output capacitance (COSS) profile 3 2 1... See More ⇒
Detailed specifications: STP60NE06L-16FP, STP60NF06LFP, STP60NH2LL, STP6308, STP6506, STP6621, STP6623, STP6635GH, BS170, STP6N65M2, STP6N80K5, STP6NB90, STP6NC60, STP6NK60ZFP, STP6NK70Z, STP6NK90ZFP, STP6NM60N
Keywords - STP6N60M2 MOSFET specs
STP6N60M2 cross reference
STP6N60M2 equivalent finder
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STP6N60M2 replacement
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