STP6N60M2 Datasheet and Replacement
Type Designator: STP6N60M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.4 nS
Cossⓘ - Output Capacitance: 14 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220
STP6N60M2 substitution
STP6N60M2 Datasheet (PDF)
stf6n60m2 stp6n60m2 stu6n60m2.pdf

STF6N60M2, STP6N60M2, STU6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 32 Order codes ID1TJmax maxIPAK3STF6N60M221STP6N60M2 650 V 1.2 4.5 ATO-220FP TABSTU6N60M2 Extremely low gate charge3 Lower RDS(on) x area vs previous
stp6n60fi.pdf

STP6N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP6N60FI 600 V
stp6n60f.pdf

STP6N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP6N60FI 600 V
stf6n65m2 stp6n65m2 stu6n65m2.pdf

STF6N65M2, STP6N65M2, STU6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTF6N65M23 3STP6N65M2 650 V 1.35 4 A2211STU6N65M2TO-220FP TO-220TAB Extremely low gate charge Excellent output capacitance (COSS) profile32 1
Datasheet: STP60NE06L-16FP , STP60NF06LFP , STP60NH2LL , STP6308 , STP6506 , STP6621 , STP6623 , STP6635GH , 18N50 , STP6N65M2 , STP6N80K5 , STP6NB90 , STP6NC60 , STP6NK60ZFP , STP6NK70Z , STP6NK90ZFP , STP6NM60N .
History: 2SK303
Keywords - STP6N60M2 MOSFET datasheet
STP6N60M2 cross reference
STP6N60M2 equivalent finder
STP6N60M2 lookup
STP6N60M2 substitution
STP6N60M2 replacement
History: 2SK303



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