STP77N6F6 Specs and Replacement

Type Designator: STP77N6F6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 77 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 292 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO-220

STP77N6F6 substitution

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STP77N6F6 datasheet

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STP77N6F6

STP77N6F6 N-channel 60 V, 0.0063 typ., 77 A STripFET VI DeepGATE Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STP77N6F6 60 V 0.007 77 A 80 W TAB RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) 3 2 High avalanche ruggedness 1 TO-220 Low gate drive power losses Very low... See More ⇒

Detailed specifications: STP6NK90ZFP, STP6NM60N, STP6NS25, STP7401, STP7407, STP75N20, STP75N75F4, STP75NF75FP, IRFZ24N, STP7N105K5, STP7N60M2, STP7N65M2, STP7N80K5, STP7NB60, STP7NK40ZFP, STP7NM50N, STP80N10F7

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs