All MOSFET. STP77N6F6 Datasheet

 

STP77N6F6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP77N6F6
   Marking Code: 77N6F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 77 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 70.5 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 292 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-220

 STP77N6F6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP77N6F6 Datasheet (PDF)

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 stp77n6f6.pdf

STP77N6F6 STP77N6F6

STP77N6F6N-channel 60 V, 0.0063 typ., 77 A STripFET VI DeepGATE Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID PTOTSTP77N6F6 60 V 0.007 77 A 80 WTAB RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)32 High avalanche ruggedness1TO-220 Low gate drive power losses Very low

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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