STP77N6F6 Datasheet and Replacement
Type Designator: STP77N6F6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 77 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 292 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-220
STP77N6F6 substitution
STP77N6F6 Datasheet (PDF)
stp77n6f6.pdf

STP77N6F6N-channel 60 V, 0.0063 typ., 77 A STripFET VI DeepGATE Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID PTOTSTP77N6F6 60 V 0.007 77 A 80 WTAB RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)32 High avalanche ruggedness1TO-220 Low gate drive power losses Very low
Datasheet: STP6NK90ZFP , STP6NM60N , STP6NS25 , STP7401 , STP7407 , STP75N20 , STP75N75F4 , STP75NF75FP , AON6380 , STP7N105K5 , STP7N60M2 , STP7N65M2 , STP7N80K5 , STP7NB60 , STP7NK40ZFP , STP7NM50N , STP80N10F7 .
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