STP8N80K5 Specs and Replacement

Type Designator: STP8N80K5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO-220

STP8N80K5 substitution

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STP8N80K5 datasheet

 ..1. Size:1185K  st
stp8n80k5 stu8n80k5.pdf pdf_icon

STP8N80K5

STP8N80K5, STU8N80K5 N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features Order codes VDS RDS(on)max. ID PTOT STP8N80K5 TAB 800 V 0.95 6 A 110 W TAB STU8N80K5 3 Worldwide best FOM (figure of merit) 2 1 3 2 Ultra low gate charge 1 IPAK TO-220 100% avalanche tested ... See More ⇒

 9.1. Size:698K  st
stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf pdf_icon

STP8N80K5

STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V ... See More ⇒

 9.2. Size:326K  st
stp8nc60.pdf pdf_icon

STP8N80K5

STP8NC60 STP8NC60FP N-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FP PowerMesh II MOSFET TYPE VDSS RDS(on) ID STP8NC60 600 V ... See More ⇒

 9.3. Size:554K  st
stb8nm60t4 std5nm60-1 std5nm60t4 stp8nm60fp.pdf pdf_icon

STP8N80K5

STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS(on) ID Pw 3 1 STD5NM60 650 V ... See More ⇒

Detailed specifications: STP80N10F7, STP80N6F6, STP80N70F6, STP80NE03L-06, STP80NE06-10, STP80NF03L, STP80NF03L-04, STP80NF55-06FP, AON7403, STP8NK85Z, STP8NM50FP, STP8NM60D, STP8NM60FP, STP8NM60N, STP8NS25FP, STP90N6F6, STP9235

Keywords - STP8N80K5 MOSFET specs

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