All MOSFET. STQ1HN60K3-AP Datasheet

 

STQ1HN60K3-AP MOSFET. Datasheet pdf. Equivalent


   Type Designator: STQ1HN60K3-AP
   Marking Code: 1HN60K3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 0.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-92

 STQ1HN60K3-AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STQ1HN60K3-AP Datasheet (PDF)

 ..1. Size:1181K  st
stq1hn60k3-ap.pdf

STQ1HN60K3-AP
STQ1HN60K3-AP

STQ1HN60K3-APN-channel 600 V, 6.7 typ., 0.4 A SuperMESH3 Power MOSFET in a TO-92 packageDatasheet - production dataFeaturesRDS(on) Order code VDS max ID PTOTSTQ1HN60K3-AP 600 V 8 0.4 A 3 W 100% avalanche tested32 Extremely high dv/dt capability1 Gate charge minimizedTO-92 Very low intrinsic capacitance Improved diode reverse recovery cha

 8.1. Size:466K  st
stn1hnk60 stq1hnk60r-ap.pdf

STQ1HN60K3-AP
STQ1HN60K3-AP

STN1HNK60, STQ1HNK60R-APDatasheetN-channel 600 V, 7.3 typ., 0.4 A SuperMESH Power MOSFETs in a SOT-223 and TO-92 packages4 Features231VDS RDS(on) max. IDOrder code PackageSOT-223STN1HNK60 SOT-223600 V 8.5 0.4 ASTQ1HNK60R-AP TO-92 Extremely high dv/dt capability 100% avalanche tested32 Gate charge minimized1TO-92 (Ammopack)D(2, 4)Appli

 8.2. Size:424K  st
std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf

STQ1HN60K3-AP
STQ1HN60K3-AP

STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V

 8.3. Size:427K  st
std1nk60-1 std1nk60t4 std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf

STQ1HN60K3-AP
STQ1HN60K3-AP

STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V

 8.4. Size:116K  st
stq1hnc60.pdf

STQ1HN60K3-AP
STQ1HN60K3-AP

STQ1HNC60N-CHANNEL 600V - 7 - 0.4A TO-92PowerMeshII MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTQ1HNC60 600 V

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top