All MOSFET. STS10P3LLH6 Datasheet

 

STS10P3LLH6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STS10P3LLH6
   Marking Code: 10K3L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 2.7 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
   Maximum Drain Current |Id|: 10 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 33 nC
   Rise Time (tr): 112 nS
   Drain-Source Capacitance (Cd): 414 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
   Package: SO-8

 STS10P3LLH6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STS10P3LLH6 Datasheet (PDF)

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 sts10p3llh6.pdf

STS10P3LLH6 STS10P3LLH6

STS10P3LLH6 P-channel 30 V, 0.01 typ., 10 A, STripFET H6 Power MOSFET in a SO-8 package Datasheet - preliminary data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology,

 8.1. Size:224K  st
 sts10pf30l.pdf

STS10P3LLH6 STS10P3LLH6

STS10PF30LP-CHANNEL 30V - 0.012 - 10A SO-8STripFET II POWER MOSFETTable 1: General FeaturesFigure 1:PackageTYPE VDSS RDS(on) IDSTS10PF30L 30V

 8.2. Size:367K  st
 sts10p4llf6.pdf

STS10P3LLH6 STS10P3LLH6

STS10P4LLF6P-channel 40 V, 0.013 typ., 10 A, STripFET VI DeepGATEPower MOSFET in a SO-8 packageDatasheet - preliminary dataFeatures Order code VDS RDS(on) max IDSTS10P4LLF6 40 V 0.017 10A RDS(on)* Qg industry benchmark4 Extremely low on-resistance RDS(on)1 High avalanche ruggednessSO-8Applications Switching applicationsDescriptionFigure 1.

 8.3. Size:827K  cn vbsemi
 sts10pf30l.pdf

STS10P3LLH6 STS10P3LLH6

STS10PF30Lwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P

 8.4. Size:834K  cn vbsemi
 sts10p4llf6.pdf

STS10P3LLH6 STS10P3LLH6

STS10P4LLF6www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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