STS10P4LLF6 Datasheet and Replacement

STS10P4LLF6P-channel 40 V, 0.013 typ., 10 A, STripFET VI DeepGATEPower MOSFET in a SO-8 packageDatasheet - preliminary dataFeatures Order code VDS RDS(on) max IDSTS10P4LLF6 40 V 0.017 10A RDS(on)* Qg industry benchmark4 Extremely low on-resistance RDS(on)1 High avalanche ruggednessSO-8Applications Switching applicationsDescriptionFigure 1.

STS10P4LLF6www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

STS10P3LLH6 P-channel 30 V, 0.01 typ., 10 A, STripFET H6 Power MOSFET in a SO-8 package Datasheet - preliminary data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology,

STS10PF30LP-CHANNEL 30V - 0.012 - 10A SO-8STripFET II POWER MOSFETTable 1: General FeaturesFigure 1:PackageTYPE VDSS RDS(on) IDSTS10PF30L 30V

STS10PF30Lwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P