All MOSFET. STU9N60M2 Datasheet

 

STU9N60M2 Datasheet and Replacement


   Type Designator: STU9N60M2
   Marking Code: 9N60M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
   Package: IPAK
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STU9N60M2 Datasheet (PDF)

 ..1. Size:1473K  st
 std9n60m2 stp9n60m2 stu9n60m2.pdf pdf_icon

STU9N60M2

STD9N60M2, STP9N60M2, STU9N60M2N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1DPAK STD9N60M2STP9N60M2 650 V 0.78 5.5 ATABSTU9N60M2TAB Extremely low gate charge3 3 Lower RDS(on) x area vs previous generation2 2

 8.1. Size:1352K  st
 std9n65m2 stf9n65m2 stp9n65m2 stu9n65m2.pdf pdf_icon

STU9N60M2

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDS max ID31DPAK STD9N65M2321 STF9N65M2650 V 0.9 5 ASTP9N65M2TO-220FPTAB STU9N65M2TAB Extremely low gate charge32 Excellent output capacit

 9.1. Size:71K  st
 stu9na60.pdf pdf_icon

STU9N60M2

STU9NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTU9NA60 600 V

 9.2. Size:231K  st
 stu9nb80.pdf pdf_icon

STU9N60M2

STU9NB80N-CHANNEL 800V - 0.85 - 9.3A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTU9NB80 800 V

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History: AP4533GEM-HF

Keywords - STU9N60M2 MOSFET datasheet

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 STU9N60M2 equivalent finder
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