STU9N60M2 Specs and Replacement
Type Designator: STU9N60M2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
Package: IPAK
STU9N60M2 substitution
- MOSFET ⓘ Cross-Reference Search
STU9N60M2 datasheet
std9n60m2 stp9n60m2 stu9n60m2.pdf
STD9N60M2, STP9N60M2, STU9N60M2 N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 TJmax max 1 DPAK STD9N60M2 STP9N60M2 650 V 0.78 5.5 A TAB STU9N60M2 TAB Extremely low gate charge 3 3 Lower RDS(on) x area vs previous generation 2 2... See More ⇒
std9n65m2 stf9n65m2 stp9n65m2 stu9n65m2.pdf
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB RDS(on) Order codes VDS max ID 3 1 DPAK STD9N65M2 3 2 1 STF9N65M2 650 V 0.9 5 A STP9N65M2 TO-220FP TAB STU9N65M2 TAB Extremely low gate charge 3 2 Excellent output capacit... See More ⇒
stu9na60.pdf
STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STU9NA60 600 V ... See More ⇒
stu9nb80.pdf
STU9NB80 N-CHANNEL 800V - 0.85 - 9.3A - TO-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID STU9NB80 800 V ... See More ⇒
Detailed specifications: STU7N60M2, STU7N65M2, STU7N80K5, STU7NF25, STU80N4F6, STU8N80K5, STU95N4F3, STU9HN65M2, AOD4184A, STU9N65M2, IRFR420APBF, IRFR420B, IRFR420PBF, IRFR430A, IRFR430APBF, IRFR4510PBF, IRFR4615PBF
Keywords - STU9N60M2 MOSFET specs
STU9N60M2 cross reference
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