2SJ496 PDF and Equivalents Search

2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 (Previous ADE-208-482A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D... See More ⇒

Preliminary Datasheet R07DS0433EJ0400 2SJ496 (Previous REJ03G0870-0300) Rev.4.00 Silicon P Channel MOS FET Jun 07, 2011 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code PRSS0003DC-A (Pack... See More ⇒

Ordering number ENN6589 2SJ499 P-Channel Silicon MOSFET 2SJ499 Load Switching Applications Features Package Dimensions Low ON-state resistance. unit mm 4V drive. 2083B [2SJ499] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ499] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1 Gat... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ493 Isolated TO-220 FEATURES Super low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS = 10 V, ID = 8 A) RDS(on)2... See More ⇒

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor (in millimeter) designed for high current switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES Super Low On-State Resistance RDS(on)1 = 30 m MAX. (VGS = 10 V, ID =... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for DC/DC converters and motor/lamp driver 2SJ492 TO-220AB circuits. 2SJ492-S TO-262 2SJ492-ZJ TO-263 FEATURES Low on-state resistance RDS(on)1 = 100 m (MAX.) (VG... See More ⇒

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION (in millimeter) This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5 0.2 10.0 0.3 3.2 0.2 2.7 0.2 FEATURES Super Low On-State Resistance RDS(on)1 = 50 m Max. (VGS = 10 V, ID = 1... See More ⇒

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒

SMD Type MOSFET P-Channel MOSFET 2SJ492-ZJ Features VDS (V) =-60V ID =-20 A RDS(ON) 100m (VGS =-10V) RDS(ON) 185m (VGS =-4V) Low Ciss Ciss = 1210 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V VGS(AC) 20 Gate-Sourc... See More ⇒

SMD Type MOSFET MOS Field Effect Transistor 2SJ492 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 Low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS =-10V, ID =-10A) RDS(on)2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) +0.1 Low Ciss Ciss = 1210 pF (TYP.) 0.1max 1.27-0.1 Built-in gate protection diode +0.1 0.81-0.1 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2D... See More ⇒