IRFR4510PBF Specs and Replacement
Type Designator: IRFR4510PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 213 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0139 Ohm
Package: TO-252
IRFR4510PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRFR4510PBF datasheet
irfr4510pbf irfu4510pbf.pdf
PD - 97784 IRFR4510PbF IRFU4510PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 11.1m l Uninterruptible Power Supply max. 13.9m l High Speed Power Switching G ID (Silicon Limited) 63A l Hard Switched and High Frequency Circuits S ID (Package Limited) 56A Benefits l Improved Gate, Avalanche and Dynamic dV/d... See More ⇒
irfr4510tr.pdf
IRFR4510TR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 100 % Rg Tested 0.0075 at VGS = 10 V 85 100 100 % UIS Tested 0.0095 at VGS = 4.5 V 75 APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C,... See More ⇒
irfr4510.pdf
isc N-Channel MOSFET Transistor IRFR4510, IIRFR4510 FEATURES Static drain-source on-resistance RDS(on) 13.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 ... See More ⇒
irfr410 irfu410.pdf
IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power Features MOSFETs 1.5A, 500V These are N-Channel enhancement mode silicon gate rDS(ON) = 7.000 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the b... See More ⇒
irfr0xx irfr1xx irfr2xx irfr3xx irfr420 irfr9xx .pdf
... See More ⇒
irfr4105zpbf irfu4105zpbf.pdf
PD - 95374B IRFR4105ZPbF IRFU4105ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 24.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 30A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re... See More ⇒
auirfr4104tr.pdf
PD - 97452A AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Q... See More ⇒
auirfr4292 auirfu4292.pdf
AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features HEXFET Power MOSFET Advanced Process Technology D V(BR)DSS 250V Low On-Resistance RDS(on) typ. 275m 175 C Operating Temperature G Fast Switching max. 345m Repetitive Avalanche Allowed up to Tjmax S ID 9.3A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applicatio... See More ⇒
irfr420 irfu420.pdf
PD - 95078A IRFR420PbF IRFU420PbF Lead-Free 1/7/05 Document Number 91275 www.vishay.com 1 IRFR/U420PbF Document Number 91275 www.vishay.com 2 IRFR/U420PbF Document Number 91275 www.vishay.com 3 IRFR/U420PbF Document Number 91275 www.vishay.com 4 IRFR/U420PbF Document Number 91275 www.vishay.com 5 IRFR/U420PbF Document Number 91275 www.vishay.com 6 IRFR/U420... See More ⇒
auirfr4615 auirfu4615.pdf
PD -96398A AUTOMOTIVE GRADE AUIRFR4615 AUIRFU4615 Features HEXFET Power MOSFET l Advanced Process Technology D l Low On-Resistance VDSS 150V l 175 C Operating Temperature l Fast Switching RDS(on) typ. 34m l Repetitive Avalanche Allowed up to Tjmax G max. 42m l Lead-Free, RoHS Compliant l Automotive Qualified * ID 33A S Description D D Specifically designed for Automo... See More ⇒
irfr430a.pdf
PD - 94356A SMPS MOSFET IRFR430A IRFU430A Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply VDSS RDS(on) max ID High speed power switching 500V 1.7 5.0A Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D-Pak I-Pak Avala... See More ⇒
irfr4620pbf irfu4620pbf.pdf
PD -96207A IRFR4620PbF IRFU4620PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 64m l High Speed Power Switching G max. 78m l Hard Switched and High Frequency Circuits ID 24A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capacit... See More ⇒
auirfr4105ztr.pdf
PD - 97544 AUTOMOTIVE GRADE AUIRFR4105Z AUIRFU4105Z HEXFET Power MOSFET Features D Advanced Process Technology V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 24.5m G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID S 30A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically de... See More ⇒
irfr4105.pdf
PD - 91302C IRFR/U4105 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR4105) VDSS = 55V Straight Lead (IRFU4105) Fast Switching RDS(on) = 0.045 Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This ... See More ⇒
auirfr48ztr.pdf
PD - 97586 AUTOMOTIVE GRADE AUIRFR48Z HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance RDS(on) max. 11m 175 C Operating Temperature Fast Switching G ID (Silicon Limited) 62A Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * Des... See More ⇒
irfr420apbf irfu420apbf.pdf
PD - 95075A SMPS MOSFET IRFR420APbF IRFU420APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) max ID l High speed power switching 500V 3.0 3.3A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitanc... See More ⇒
irfr430apbf irfu430apbf.pdf
PD -95076A SMPS MOSFET IRFR430APbF IRFU430APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) max ID l High speed power switching 500V 1.7 5.0A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance... See More ⇒
auirfr4105tr.pdf
PD - 97597A AUTOMOTIVE GRADE AUIRFR4105 HEXFET Power MOSFET Features D V(BR)DSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 45m Dynamic dV/dT Rating G ID (Silicon Limited) 27A 175 C Operating Temperature Fast Switching ID (Package Limited) 20A S Fully Avalanche Rated Repetitive Avalanche Allowed up toTjmax Lead-Free,... See More ⇒
irfr4104pbf irfu4104pbf.pdf
PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 40V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 5.5m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on... See More ⇒
irfr4615pbf irfu4615pbf.pdf
IRFR4615PbF IRFU4615PbF HEXFET Power MOSFET D VDSS 150V Applications l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 34m l Uninterruptible Power Supply G max. 42m l High Speed Power Switching l Hard Switched and High Frequency Circuits ID 33A S D D Benefits l Improved Gate, Avalanche and Dynamic dV/dt S S D Ruggedness G G l Fully Characterized Capac... See More ⇒
irfr420a.pdf
PD - 94355 SMPS MOSFET IRFR420A IRFU420A Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply VDSS RDS(on) max ID High speed power switching 500V 3.0 3.3A Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D-Pak I-Pak Avalan... See More ⇒
irfr4105pbf irfu4105pbf.pdf
PD - 95550A IRFR4105PbF IRFU4105PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.045 G Description Fifth Generation HEXFETs from International Rectifier ID = 27A S utilize advanced processing techniques to achieve the lowest possible on-r... See More ⇒
irfr48zpbf irfu48zpbf.pdf
PD - 95950A IRFR48ZPbF IRFU48ZPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 11m G Description ID = 42A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resista... See More ⇒
irfr420b irfu420b.pdf
November 2001 IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to ... See More ⇒
irfr430a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 1.169 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char... See More ⇒
irfr420a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char... See More ⇒
irfr430a irfr430apbf irfu430apbf sihfr430a sihfu430a.pdf
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ( )VGS = 10 V 1.7 Improved Gate, Avalanche and Dynamic Qg (Max.) (nC) 24 dV/dt Ruggedness Qgs (nC) 6.5 Fully Characterized Capacitance and Qgd (nC) 13 Avalanche Voltage and Current ... See More ⇒
irfr420 irfu420 sihfr420 sihfu420.pdf
IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Repetitive Avalanche Rated Qg (Max.) (nC) 19 Surface Mount (IRFR420, SiHFR420) Qgs (nC) 3.3 Straight Lead (IRFU420, SiHFU420) Qgd (nC) 13 Available in Tap... See More ⇒
irfr430a irfu430a sihfr430a sihfu430a.pdf
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 1.7 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.5 Qgd (nC) 13 Fully Characterized Capacitance and Avalanche Voltage ... See More ⇒
irfr420apbf irfu420apbf sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 Fully Characterized Capac... See More ⇒
irfr420a irfu420a sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 Fully Characterized Capac... See More ⇒
irfr420pbf irfr420trpbf irfu420pbf sihfr420 sihfu420.pdf
IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 Surface Mount (IRFR420, SiHFR420) Straight Lead (IRFU420, SiHFU420) Qg (Max.) (nC) 19 Available in Tape and Reel Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease ... See More ⇒
auirfr48z.pdf
AUTOMOTIVE GRADE AUIRFR48Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature RDS(on) max. 11m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 62A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descript... See More ⇒
irfr430a irfu430a sihfr430a sihfu430a.pdf
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ( )VGS = 10 V 1.7 Improved Gate, Avalanche and Dynamic Qg (Max.) (nC) 24 dV/dt Ruggedness Qgs (nC) 6.5 Fully Characterized Capacitance and Qgd (nC) 13 Avalanche Voltage and Current ... See More ⇒
auirfr4292 auirfu4292.pdf
AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features VDSS 250V Advanced Process Technology RDS(on) typ. 275m Low On-Resistance max. 175 C Operating Temperature 345m Fast Switching ID 9.3A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * D S S Description D G G Specifical... See More ⇒
irfr420a irfu420a sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ( )VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 17 Fully Characterized Capacitance and Qgs (nC) 4.3 Avalanche Voltage and Current Qgd (nC) 8.5... See More ⇒
auirfr4620.pdf
AUTOMOTIVE GRADE AUIRFR4620 Features HEXFET Power MOSFET Advanced Process Technology VDSS 200V Ultra Low On-Resistance RDS(on) typ. 64m Dynamic dV/dT Rating max. 78m 175 C Operating Temperature ID 24A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Descrip... See More ⇒
auirfr4104 auirfu4104.pdf
AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D ... See More ⇒
auirfr4105z auirfu4105z.pdf
AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed... See More ⇒
irfr410 irfu410.pdf
IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power Features MOSFETs 1.5A, 500V These are N-Channel enhancement mode silicon gate rDS(ON) = 7.000 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the b... See More ⇒
irfr48ztr.pdf
IRFR48ZTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit ... See More ⇒
irfr420tr.pdf
IRFR420TR www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS ... See More ⇒
irfr4620trpbf.pdf
IRFR4620TRPBF www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM R... See More ⇒
irfr4104trpbf.pdf
IRFR4104TRPBF www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMU... See More ⇒
irfr4105ztr.pdf
IRFR4105ZTR www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n... See More ⇒
irfr420btm.pdf
IRFR420BTM www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS... See More ⇒
irfr48z.pdf
isc N-Channel MOSFET Transistor IRFR48Z, IIRFR48Z FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-So... See More ⇒
irfr4620.pdf
isc N-Channel MOSFET Transistor IRFR4620, IIRFR4620 FEATURES Static drain-source on-resistance RDS(on) 78m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V ... See More ⇒
irfr430a.pdf
isc N-Channel MOSFET Transistor IRFR430A FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒
irfr420tr.pdf
isc N-Channel MOSFET Transistor IRFR420TR, IIRFR420TR FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate... See More ⇒
irfr4105z.pdf
isc N-Channel MOSFET Transistor IRFR4105Z, IIRFR4105Z FEATURES Static drain-source on-resistance RDS(on) 24.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55... See More ⇒
irfr4105.pdf
isc N-Channel MOSFET Transistor IRFR4105, IIRFR4105 FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-... See More ⇒
irfr4615.pdf
isc N-Channel MOSFET Transistor IRFR4615, IIRFR4615 FEATURES Static drain-source on-resistance RDS(on) 42m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V ... See More ⇒
irfr420.pdf
isc N-Channel MOSFET Transistor IRFR420 FEATURES Drain Current I = 2.4A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
irfr4104.pdf
isc N-Channel MOSFET Transistor IRFR4104, IIRFR4104 FEATURES Static drain-source on-resistance RDS(on) 5.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 40 V DSS V Gate... See More ⇒
Detailed specifications: STU9HN65M2, STU9N60M2, STU9N65M2, IRFR420APBF, IRFR420B, IRFR420PBF, IRFR430A, IRFR430APBF, IRF3205, IRFR4615PBF, IRFR4620PBF, IRFR48ZPBF, IRFR5305PBF, IRFR540ZPBF, IRFR5410PBF, IRFR5505GPBF, IRFR5505PBF
Keywords - IRFR4510PBF MOSFET specs
IRFR4510PBF cross reference
IRFR4510PBF equivalent finder
IRFR4510PBF pdf lookup
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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