IRFR4620PBF Specs and Replacement

Type Designator: IRFR4620PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 144 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22.4 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO-252

IRFR4620PBF substitution

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IRFR4620PBF datasheet

 ..1. Size:384K  international rectifier
 irfr4620pbf irfu4620pbf.pdf pdf_icon

IRFR4620PBF

PD -96207A IRFR4620PbF IRFU4620PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 64m l High Speed Power Switching G max. 78m l Hard Switched and High Frequency Circuits ID 24A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capacit... See More ⇒

 6.1. Size:626K  infineon
 auirfr4620.pdf pdf_icon

IRFR4620PBF

AUTOMOTIVE GRADE AUIRFR4620 Features HEXFET Power MOSFET Advanced Process Technology VDSS 200V Ultra Low On-Resistance RDS(on) typ. 64m Dynamic dV/dT Rating max. 78m 175 C Operating Temperature ID 24A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Descrip... See More ⇒

 6.2. Size:1008K  cn vbsemi
 irfr4620trpbf.pdf pdf_icon

IRFR4620PBF

IRFR4620TRPBF www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM R... See More ⇒

 6.3. Size:241K  inchange semiconductor
 irfr4620.pdf pdf_icon

IRFR4620PBF

isc N-Channel MOSFET Transistor IRFR4620, IIRFR4620 FEATURES Static drain-source on-resistance RDS(on) 78m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V ... See More ⇒

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Detailed specifications: STU9N65M2, IRFR420APBF, IRFR420B, IRFR420PBF, IRFR430A, IRFR430APBF, IRFR4510PBF, IRFR4615PBF, IRF840, IRFR48ZPBF, IRFR5305PBF, IRFR540ZPBF, IRFR5410PBF, IRFR5505GPBF, IRFR5505PBF, IRFR6215PBF, IRFR9010PBF

Keywords - IRFR4620PBF MOSFET specs

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