IXFK27N80 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXFK27N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 350 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 712 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO264

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IXFK27N80 Datasheet (PDF)

..1. Size:162K ixys
ixfk25n80 ixfk27n80 ixfn25n80 ixfn27n80.pdf pdf_icon

Not for New DesignsVDSS ID25 RDS(on)IXFK 27N80 800 V 27 A 0.30 HiPerFETTM Power MOSFETs IXFK 25N80 800 V 25 A 0.35 N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrIXFN 27N80 800 V 27 A 0.30 IXFN 25N80 800 V 25 A 0.35 TO-264 AA (IXFK)Symbol Test Conditions Maximum Ratings

..2. Size:151K ixys
ixfk27n80 ixfn27n80 ixfk25n80 ixfn25n80.pdf pdf_icon

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsN-Channel Enhancement ModeIXFK 27N80 800 V 27 A 0.30 WAvalanche Rated, High dv/dt, Low trrIXFK 25N80 800 V 25 A 0.35 WIXFN 27N80 800 V 27 A 0.30 WIXFN 25N80 800 V 25 A 0.35 WSymbol Test Conditions Maximum Ratings TO-264 AA (IXFK)IXFK IXFNVDSS TJ = 25C to 150C 800 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 800 VVGS Continuo

0.1. Size:144K ixys
ixfk27n80q ixfx27n80q.pdf pdf_icon

VDSS = 800 VHiPerFETTM IXFK 27N80QIXFX 27N80QID25 = 27 APower MOSFETsRDS(on) = 320 mQ-CLASS trr 250 ns Single MOSFET DieN-Channel Enhancement ModeAvalanche Rated, Low Qg,High dV/dt, Low trrSymbol Test Conditions Maximum RatingsPLUS 247TM (IXFX)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 V

9.1. Size:122K ixys
ixfk260n17t ixfx260n17t.pdf pdf_icon

Advance Technical InformationGigaMOSTM VDSS = 170VIXFK260N17TID25 = 260APower MOSFETIXFX260N17T RDS(on) 6.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 170 VD(TAB)SVDGR TJ = 25C to 175C, RGS =

9.2. Size:251K ixys
ixfk26n90 ixfx26n90 ixfk25n90 ixfx25n90.pdf pdf_icon

www.DataSheet4U.comVDSS IDSS RDS(on) trrHiPerFETTM Power MOSFETsIXFK/IXFX 26N90 900 V 26 A 0.30 W 250 nsIXFK/IXFX 25N90 900 V 25 A 0.33 W 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 V (TAB)GVGSM Transient 30 VDSID2

9.3. Size:124K ixys
ixfk24n100q3 ixfx24n100q3.pdf pdf_icon

Advance Technical InformationHiperFETTM VDSS = 1000VIXFK24N100Q3Power MOSFETs ID25 = 24AIXFX24N100Q3 Q3-Class RDS(on) 440m trr 300nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic Rectifier TO-264 (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1000 V DSVDGR TJ = 25C to 150

9.4. Size:139K ixys
ixfk230n20t ixfx230n20t.pdf pdf_icon

Advance Technical InformationGigaMOSTM VDSS = 200VIXFK230N20TID25 = 230APower MOSFETIXFX230N20T RDS(on) 7.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 200 VGDVDGR TJ = 25C to 175C, RGS = 1M

9.5. Size:104K ixys
ixfk26n60q ixfx26n60q.pdf pdf_icon

IXFK 26N60Q VDSS = 600 VHiPerFETTMIXFX 26N60Q ID25 = 26 APower MOSFETsRDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary DataSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Conti

9.6. Size:133K ixys
ixfk24n100 ixfx24n100.pdf pdf_icon

VDSS = 1000VHiPerFETTM PowerIXFK24N100ID25 = 24AMOSFETsIXFX24N100 RDS(on) 390m t 250nsrrN-Channel Enhancement ModeAvalanche RatedFast Intrisic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VG (T

9.7. Size:149K ixys
ixfh20n80q ixfk20n80q ixft20n80q.pdf pdf_icon

IXFH20N80Q VDSS = 800 VHiPerFETTMIXFK20N80Q ID25 = 20 APower MOSFETs IXFT20N80Q RDS(on) = 0.42 Q-ClassN-Channel Enhancement Mode trr 250 ns Avalanche Rated,Low Qg, High dv/dtPreliminary DataTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800

9.8. Size:113K ixys
ixfk200n10p ixfx200n10p.pdf pdf_icon

VDSS = 100 VIXFK 200N10PPolarTM HiPerFETID25 = 200 AIXFX 200N10PPower MOSFET RDS(on) 7.5 m N-Channel Enhancement Modetrr 150 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGS Continuous 20

9.9. Size:158K ixys
ixfh24n80p ixfk24n80p ixft24n80p.pdf pdf_icon

IXFH 24N80P VDSS = 800 VPolarHVTM HiPerFETIXFK 24N80P ID25 = 24 APower MOSFET IXFT 24N80P RDS(on) 400 m N-Channel Enhancement Mode trr 250 ns Avalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGSS Con

9.10. Size:123K ixys
ixfk210n17t ixfx210n17t.pdf pdf_icon

Advance Technical InformationGigaMOSTM VDSS = 170VIXFK210N17TID25 = 210APower MOSFETIXFX210N17T RDS(on) 7.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 170 VD(TAB)SVDGR TJ = 25C to 175C, RGS =

9.11. Size:126K ixys
ixfx220n15p ixfk220n15p.pdf pdf_icon

PolarTM Power MOSFET VDSS = 150VIXFK220N15PID25 = 220AHiperFETTMIXFX220N15P RDS(on) 9m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 150 V DSVDGR TJ = 25C to 175C, RGS = 1M 150 VTabVGSS Conti

Datasheet: IXFK150N15 , IXFK170N10 , IXFK180N07 , IXFK180N085 , IXFK180N10 , IXFK20N80Q , IXFK26N60Q , IXFK26N90 , IRLB4132 , IXFK32N50Q , IXFK32N60 , IXFK33N50 , IXFK34N80 , IXFK35N50 , IXFK36N60 , IXFK44N50 , IXFK44N60 .

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All MOSFET. IXFK27N80 Datasheet

IXFK27N80 MOSFET. Datasheet pdf. Equivalent

IXFK27N80 Datasheet (PDF)

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