IRFR9024NPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR9024NPBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 55 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
Package: TO-252
IRFR9024NPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR9024NPBF Datasheet (PDF)
irfr9024npbf irfu9024npbf.pdf
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PD - 95015AIRFR9024NPbFIRFU9024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U9024NPbF2 www.irf.comIRFR/U9024NPbFwww.irf.com 3IRFR/U9024NPbF4 www.irf.comIRFR/U9024NPbFwww.irf.com 5IRFR/U9024NPbF6 www.irf.comIRFR/U9024NPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage In
irfr9024npbf irfu9024npbf.pdf
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PD - 95015AIRFR9024NPbFIRFU9024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U9024NPbF2 www.irf.comIRFR/U9024NPbFwww.irf.com 3IRFR/U9024NPbF4 www.irf.comIRFR/U9024NPbFwww.irf.com 5IRFR/U9024NPbF6 www.irf.comIRFR/U9024NPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage In
irfr9024ncpbf irfu9024ncpbf.pdf
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PD - 96048IRFR9024NCPbFIRFU9024NCPbF(IRFR9024NCPbF)(IRFU9024NCPbF) Lead-Freewww.irf.com 105/31/06IRFR/U9024NCPbF2 www.irf.comIRFR/U9024NCPbFwww.irf.com 3IRFR/U9024NCPbF4 www.irf.comIRFR/U9024NCPbFwww.irf.com 5IRFR/U9024NCPbF6 www.irf.comIRFR/U9024NCPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductanc
irfr9024n.pdf
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PD - 9.1506IRFR/U9024NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR9024N) Straight Lead (IRFU9024N)RDS(on) = 0.175 Advanced Process TechnologyG Fast SwitchingID = -11A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve
auirfr9024n auirfu9024n.pdf
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AUIRFR9024N AUTOMOTIVE GRADE AUIRFU9024N Features HEXFET Power MOSFET Advanced Planar Technology VDSS -55V Low On-Resistance P-Channel RDS(on) max. 0.175 Dynamic dv/dt Rating ID -11A 150C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Complian
irfr9024ntrpbf.pdf
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IRFR9024NTRPBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParamete
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .