IRFS17N20DPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS17N20DPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 33
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17
Ohm
Package:
TO-263
IRFS17N20DPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS17N20DPBF
Datasheet (PDF)
..1. Size:277K international rectifier
irfs17n20dpbf.pdf 
PD- 95325IRFB17N20DPbF IRFS17N20DPbFSMPS MOSFET IRFSL17N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.17 16Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanch
4.1. Size:140K international rectifier
irfb17n20d irfs17n20d irfsl17n20d.pdf
PD- 93902AIRFB17N20D IRFS17N20DSMPS MOSFET IRFSL17N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.17 16ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT
9.1. Size:262K 1
irfs150a.pdf
IRFS150AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 31 A Improved Gate Charge Extended Safe Operating AreaTO-3PF 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.)1231.Gate 2. Drain 3. Sourc
9.4. Size:259K 1
irfs140a.pdf
IRFS140AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input CapacitanceID = 23 A Improved Gate Charge Extended Safe Operating AreaTO-3PF 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.041 (Typ.)1231.Gate 2. Drain 3. Sour
9.5. Size:855K international rectifier
irfs11n50apbf.pdf
PD- 95232IRFS11N50APbF Lead-Free04/29/04Document Number: 91286 www.vishay.com1IRFS11N50APbFDocument Number: 91286 www.vishay.com2IRFS11N50APbFDocument Number: 91286 www.vishay.com3IRFS11N50APbFDocument Number: 91286 www.vishay.com4IRFS11N50APbFDocument Number: 91286 www.vishay.com5IRFS11N50APbFDocument Number: 91286 www.vishay.com6IRFS11N50APb
9.6. Size:118K international rectifier
irfs11n50a.pdf
PD- 93797SMPS MOSFETIRFS11N50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 11A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andD 2 PakAvalanche Voltage
9.8. Size:341K vishay
irfs11n50apbf sihfs11n50a.pdf
IRFS11N50A, SiHFS11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.52 Low Gate Charge Qg results in Simple DriveQg (Max.) (nC) 52RequirementQgs (nC) 13 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 18 Ruggedness Fully Characterized Capacitance and Avalanc
9.9. Size:277K inchange semiconductor
irfs11n50a.pdf
iscN-Channel MOSFET Transistor IRFS11N50AFEATURESLow drain-source on-resistance:RDS(ON) =0.52 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
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