IRFS254 MOSFET Datasheet: N-Ch, 250V, 16A. Full specification with pinout and replacement list

IRFS254 Specs and Replacement

Type Designator: IRFS254

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 345 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-3PF

IRFS254 substitution

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IRFS254 datasheet

..1. Size:234K fairchild semi
irfs254.pdf pdf_icon

IRFS254 FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 16 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.108 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris... See More ⇒

0.1. Size:207K 1
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irfs254b.pdf pdf_icon

November 2001 IRFS254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 95 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast s... See More ⇒

8.1. Size:256K 1
irfs250a.pdf pdf_icon

IRFS250A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input Capacitance ID = 21.3 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.071 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb... See More ⇒