All MOSFET. IRFS4310PBF Datasheet

 

IRFS4310PBF Datasheet and Replacement


   Type Designator: IRFS4310PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-263
 

 IRFS4310PBF substitution

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IRFS4310PBF Datasheet (PDF)

 ..1. Size:376K  international rectifier
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf pdf_icon

IRFS4310PBF

PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 6.1. Size:324K  international rectifier
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf pdf_icon

IRFS4310PBF

PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,

 6.2. Size:334K  international rectifier
auirfs4310trl.pdf pdf_icon

IRFS4310PBF

PD - 96324AUTOMOTIVE GRADEAUIRFS4310AUIRFSL4310FeaturesHEXFET Power MOSFETl Advanced Process TechnologyV(BR)DSSl Ultra Low On-Resistance 100VDl 175C Operating TemperatureRDS(on) typ.5.6ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmaxmax. 7.0mGl Lead-Free, RoHS CompliantID (Silicon Limited) 130A l Automotive Qualified *SID (Package L

 6.3. Size:672K  infineon
auirfs4310z.pdf pdf_icon

IRFS4310PBF

AUTOMOTIVE GRADE AUIRFS4310Z HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175C Operating Temperature ID (Silicon Limited) 127A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS

Datasheet: IRFS4020PBF , IRFS4115-7PPBF , IRFS4115PBF , IRFS4127PBF , IRFS41N15DPBF , IRFS4227PBF , IRFS4228PBF , IRFS4229PBF , 10N65 , IRFS4310ZPBF , IRFS4321-7PPBF , IRFS4321PBF , STB100N10F7 , STB100NF03L-03-1 , STB100NF03L-03T4 , STB100NF04T4 , STB100NH02LT4 .

History: APT10M19BVFRG | IRFU3504Z

Keywords - IRFS4310PBF MOSFET datasheet

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