All MOSFET. STB100NF03L-03T4 Datasheet

 

STB100NF03L-03T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB100NF03L-03T4
   Marking Code: B100NF03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 88 nC
   trⓘ - Rise Time: 315 nS
   Cossⓘ - Output Capacitance: 1720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: D2PAK

 STB100NF03L-03T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB100NF03L-03T4 Datasheet (PDF)

 ..1. Size:460K  st
stb100nf03l-03-1 stb100nf03l-03t4 stb100nf03l-03 stb100nf03l-03-1 stp100nf03l-03.pdf

STB100NF03L-03T4
STB100NF03L-03T4

STP100NF03L-03STB100NF03L-03 STB100NF03L-03-1N-channel 30V - 0.0026 - 100A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB100NF03L-03 30V

 3.1. Size:393K  st
stb100nf03l.pdf

STB100NF03L-03T4
STB100NF03L-03T4

STB100NF03L-03 STP100NF03L-03STB100NF03L-03-1N-CHANNEL 30V - 0.0026 -100A DPAK/IPAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB100NF03L-03 30 V

 5.1. Size:395K  st
stb100nf04t4.pdf

STB100NF03L-03T4
STB100NF03L-03T4

STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V

 5.2. Size:338K  st
stb100nf04l.pdf

STB100NF03L-03T4
STB100NF03L-03T4

STB100NF04LN-CHANNEL 40V - 0.0036 - 100A D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB100NF04L 40 V

 5.3. Size:398K  st
stb100nf04 stp100nf04.pdf

STB100NF03L-03T4
STB100NF03L-03T4

STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V

 5.4. Size:1472K  cn vbsemi
stb100nf04.pdf

STB100NF03L-03T4
STB100NF03L-03T4

STB100NF04www.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.005 at VGS = 10 V 10040 53 nC 100 % Rg and UIS tested0.006 at VGS = 4.5 V 98 Material categorization:for definitions of compliance please see DTO-263GSSSDDG

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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