STB100NH02LT4
MOSFET. Datasheet pdf. Equivalent
Type Designator: STB100NH02LT4
Marking Code: B100NH02L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 47.5
nC
trⓘ - Rise Time: 75
nS
Cossⓘ -
Output Capacitance: 800
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
D2PAK
STB100NH02LT4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB100NH02LT4
Datasheet (PDF)
..1. Size:441K st
stb100nh02lt4.pdf 
STB100NH02LN-channel 24V - 0.0052 - 60A - D2PAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB100NH02L 24V
3.1. Size:450K st
stb100nh02l.pdf
STB100NH02LN-channel 24V - 0.0052 - 60A - D2PAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB100NH02L 24V
7.2. Size:1657K st
stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220Datasheet - production dataFeaturesTAB TABRDS(on) 3Order codes VDS max ID PTOT131 DPAKSTB100N10F7 80 A 120 WD2PAKSTD100N10F7 80 A 120WTAB100 V 0.008 STF100N10F7 45 A 30 WSTP100N10F7 80A 150 W
7.3. Size:395K st
stb100nf04t4.pdf
STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V
7.4. Size:338K st
stb100nf04l.pdf
STB100NF04LN-CHANNEL 40V - 0.0036 - 100A D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB100NF04L 40 V
7.5. Size:393K st
stb100nf03l.pdf
STB100NF03L-03 STP100NF03L-03STB100NF03L-03-1N-CHANNEL 30V - 0.0026 -100A DPAK/IPAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB100NF03L-03 30 V
7.6. Size:398K st
stb100nf04 stp100nf04.pdf
STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V
7.7. Size:557K st
stb100n6f7.pdf
STB100N6F7N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max. ID PTOTTAB STB100N6F7 60 V 5.6 m 100A 125 W Among the lowest RDS(on) on the market3 Excellent figure of merit (FoM)1 Low Crss/Ciss ratio for EMI immunity High avalanche ruggednessD2PAKApplications
7.8. Size:648K st
stb100n10f7 std100n10f7 stf100n10f7 sti100n10f7 stp100n10f7.pdf
STB100N10F7, STD100N10F7, STF100N10F7STI100N10F7, STP100N10F7DatasheetN-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packagesTABTAB Features2 31VDS RDS(on) max. IDOrder codes Package31D2PAK DPAKSTB100N10F7 80 AD2PAKTAB TABSTD100N10F7 80 A DPAKSTF100N10F7 100 V 8.0 m 45 A TO-220FP33231 2
7.9. Size:1472K cn vbsemi
stb100nf04.pdf
STB100NF04www.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.005 at VGS = 10 V 10040 53 nC 100 % Rg and UIS tested0.006 at VGS = 4.5 V 98 Material categorization:for definitions of compliance please see DTO-263GSSSDDG
7.10. Size:203K inchange semiconductor
stb100n10f7.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB100N10F7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
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