STB10N60M2 MOSFET Datasheet: N-Ch, 600V, 7.5A. Full specification with pinout and replacement list

STB10N60M2 Specs and Replacement

Type Designator: STB10N60M2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: D2PAK

STB10N60M2 substitution

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STB10N60M2 datasheet

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STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 N-channel 950 V, 0.65 typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet - production data TAB Features 3 Order codes VDS RDS(on) max ID PTOT 1 2 3 D PAK STB10N95K5 130 W 2 1 STF10N95K5 30 W TO-220FP 950 V 0.8 8 A STP10N95K5 TAB 130 W STW10N95K5 Worldwide best FOM ... See More ⇒