STB10N95K5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB10N95K5
Marking Code: 10N95K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 50 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: D2PAK
STB10N95K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB10N95K5 Datasheet (PDF)
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