STB10N95K5 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STB10N95K5
   Marking Code: 10N95K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: D2PAK

STB10N95K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STB10N95K5 Datasheet (PDF)

..1. Size:1328K st
stb10n95k5 stf10n95k5 stp10n95k5 stw10n95k5.pdf

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5N-channel 950 V, 0.65 typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247Datasheet - production dataTAB Features3Order codes VDS RDS(on) max ID PTOT123D PAK STB10N95K5 130 W21STF10N95K5 30 WTO-220FP950 V 0.8 8 ASTP10N95K5TAB130 WSTW10N95K5 Worldwide best FOM

8.1. Size:1627K st
stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch

8.2. Size:1300K st
stb10n65k3 stfi10n65k3 stp10n65k3.pdf

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3

8.3. Size:938K st
stb10nk60z stp10nk60z stp10nk60zfp stw10nk60z.pdf

STB10NK60Z, STP10NK60Z,STP10NK60ZFP, STW10NK60ZN-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFETin I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packagesDatasheet - production dataFeaturesTABRDS(on) Type VDSS ID PwmaxTAB33 2STB10NK60Z-1 600 V

8.4. Size:127K st
stb10na40.pdf

STB10NA40N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on ) DSTB10NA40 400 V

8.5. Size:858K st
stb10nk60z stp10nk60z stw10nk60z.pdf

STB10NK60Z, STP10NK60ZSTW10NK60ZN-channel 650 V, 0.65 , 10 A, SuperMESH Power MOSFETZener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247FeaturesRDS(on) Type VDSS ID Pwmax3STB10NK60Z-1 600 V

8.6. Size:1300K st
stb10n65k3 stf10n65k3 stfi10n65k3 stp10n65k3.pdf