STB10NK60ZT4 MOSFET Datasheet: N-Ch, 600V, 10A. Full specification with pinout and replacement list

STB10NK60ZT4 Specs and Replacement

Type Designator: STB10NK60ZT4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 156 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: D2PAK

STB10NK60ZT4 substitution

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STB10NK60ZT4 datasheet

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STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB RDS(on) Type VDSS ID Pw max TAB 3 3 2 STB10NK60Z-1 600 V ... See More ⇒

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4.2. Size:858K st
stb10nk60z stp10nk60z stw10nk60z.pdf pdf_icon

STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 , 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features RDS(on) Type VDSS ID Pw max 3 STB10NK60Z-1 600 V ... See More ⇒

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stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf pdf_icon

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 Extremely low gate ch... See More ⇒