All MOSFET. IXFK44N60 Datasheet

 

IXFK44N60 Datasheet and Replacement


   Type Designator: IXFK44N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 330 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO264
 

 IXFK44N60 substitution

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IXFK44N60 Datasheet (PDF)

 ..1. Size:104K  ixys
ixfx44n60 ixfk44n60.pdf pdf_icon

IXFK44N60

HiPerFETTM IXFX 44N60 VDSS = 600 VIXFK 44N60 ID25 = 44 APower MOSFETsRDS(on) = 130 mWSingle MOSFET Dietrr 250 nsPLUS 247TM (IXFX)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C44 ATO-264 AA (IXFK)IDM TC = 25C, pulse width limite

 7.1. Size:162K  ixys
ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf pdf_icon

IXFK44N60

VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C

 7.2. Size:233K  ixys
ixfk44n80p ixfx44n80p.pdf pdf_icon

IXFK44N60

PolarTMIXFK44N80P VDSS = 800VHiperFETTMID25 = 44AIXFX44N80PPower MOSFET RDS(on) 190m N-Channel Enhancement ModeTO-264 (IXFK)Avalanche RatedFast Intrinsic DiodeGDSSymbol Test Conditions Maximum RatingsTabVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C, RGS = 1M 800 VPLUS247 (IXFX)VGSS Continuous 30

 7.3. Size:296K  ixys
ixfh44n50p ixfk44n50p ixft44n50p.pdf pdf_icon

IXFK44N60

IXFH 44N50P VDSS = 500 VPolarHVTM HiPerFETIXFK 44N50P ID25 = 44 APower MOSFETIXFT 44N50P RDS(on) 140 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25 C to 175 C; RGS = 1 M 500

Datasheet: IXFK27N80 , IXFK32N50Q , IXFK32N60 , IXFK33N50 , IXFK34N80 , IXFK35N50 , IXFK36N60 , IXFK44N50 , K4145 , IXFK48N50 , IXFK48N50Q , IXFK50N50 , IXFK52N30Q , IXFK55N50 , IXFK60N25Q , IXFK72N20 , IXFK73N30 .

Keywords - IXFK44N60 MOSFET datasheet

 IXFK44N60 cross reference
 IXFK44N60 equivalent finder
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