STB18N60M2 Specs and Replacement
Type Designator: STB18N60M2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: D2PAK
STB18N60M2 substitution
- MOSFET ⓘ Cross-Reference Search
STB18N60M2 datasheet
stb18n60m2 stp18n60m2 stw18n60m2.pdf
STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID 1 TJmax max 2 D PAK STB18N60M2 STP18N60M2 650 V 0.28 13 A TAB STW18N60M2 Extremely low gate charge 3 3 Lower RDS(on) x area vs previous generation... See More ⇒
stb18n65m5 std18n65m5.pdf
STB18N65M5, STD18N65M5 N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in D PAK and DPAK packages Datasheet production data Features VDSS @ RDS(on) Order codes ID TAB TJmax max TAB STB18N65M5 710 V ... See More ⇒
stb18nf25 std18nf25.pdf
STB18NF25 STD18NF25 N-channel 250 V, 0.14 , 17 A DPAK, D2PAK low gate charge STripFET II Power MOSFET Features RDS(on) Type VDSS ID PTOT max STB18NF25 250 V ... See More ⇒
stb18nm80 stf18nm80 stw18nm80 stp18nm80.pdf
STB18NM80, STF18NM80 STP18NM80, STW18NM80 N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 STB18NM80 800 V ... See More ⇒
Detailed specifications: STB15NK50ZT4, STB15NM60N, STB160NF3LLT4, STB16NF06LT4, STB16NK65Z-S, STB16NM50N, STB16NS25T4, STB16PF06LT4, IRFB4227, STB18N65M5, STB18NF30, STB18NM60ND, STB190NF04-1, STB190NF04T4, STB19NB20-1, STB19NM65N, STB200NF03-1
Keywords - STB18N60M2 MOSFET specs
STB18N60M2 cross reference
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