STB21NM50N MOSFET. Datasheet pdf. Equivalent
Type Designator: STB21NM50N
Marking Code: B21NM50N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 65 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: D2PAK
STB21NM50N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB21NM50N Datasheet (PDF)
stp21nm50n stf21nm50n stb21nm50n stb21nm50n-1 stw21nm50n.pdf
STP/F21NM50N - STW21NM50NSTB21NM50N - STB21NM50N-1N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247Second generation MDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID3(@Tjmax)3 132211STB21NM50N 550V
stb21nm50n-1 stb21nm50n stf21nm50n stp21nm50n.pdf
STP/F21NM50N - STW21NM50NSTB21NM50N - STB21NM50N-1N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247Second generation MDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID3(@Tjmax)3 132211STB21NM50N 550V
stp21nm60n stf21nm60n stb21nm60n stb21nm60n-1 stw21nm60n.pdf
STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V
stb21nm60n-1 stb21nm60n stf21nm60n stp21nm60n stw21nm60n.pdf
STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V
stp21nm60nd stf21nm60nd stb21nm60nd sti21nm60nd stw21nm60nd.pdf
STP/F21NM60ND-STW21NM60NDSTB21NM60ND-STI21NM60NDN-channel 600 V, 0.17 , 17 A FDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max 33 13221STB21NM60ND 650 V
stb21nm60nd stf21nm60nd stp21nm60nd stw21nm60nd.pdf
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60NDN-channel 600 V, 0.17 typ., 17 A FDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) Order codes IDTJmax max331 21STB21NM60ND 650 V 0.22 17 AD2PAK TO-220FPSTF21NM60ND 650 V 0.22 17 ASTP21NM60ND 650 V 0.22 17 ATABSTW21NM60N
stb21nm60nd.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB21NM60NDFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
