STB21NM60N Datasheet and Replacement

STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V

STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V

STP/F21NM60ND-STW21NM60NDSTB21NM60ND-STI21NM60NDN-channel 600 V, 0.17 , 17 A FDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max 33 13221STB21NM60ND 650 V

STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60NDN-channel 600 V, 0.17 typ., 17 A FDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) Order codes IDTJmax max331 21STB21NM60ND 650 V 0.22 17 AD2PAK TO-220FPSTF21NM60ND 650 V 0.22 17 ASTP21NM60ND 650 V 0.22 17 ATABSTW21NM60N

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB21NM60NDFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU