STB25NM60N-1 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB25NM60N-1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: I2PAK
STB25NM60N-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB25NM60N-1 Datasheet (PDF)
stb25nm60n-1 stb25nm60n stf25nm60n stp25nm60n stw25nm60n.pdf
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stb25nm50n stf25nm50n stp25nm50n stw25nm50n.pdf
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stw25nm50n stf25nm50n stb25nm50n std25nm50n.pdf
STx25NM50NN-channel 500 V, 0.11 , 22 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, D2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max323121STB25NM50N 550 V
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
