STB26NM60ND Specs and Replacement
Type Designator: STB26NM60ND
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.5 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
Package: D2PAK
STB26NM60ND substitution
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STB26NM60ND datasheet
stb26nm60nd stf26nm60nd stp26nm60nd stw26nm60nd.pdf
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 typ., 21 A, FDmesh II Power MOSFETs in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDS @ Tjmax RDS(on) max ID 3 1 STB26NM60ND 2 3 D PAK 2 1 STF26NM60ND 650 V 0.175 21 A TO-220FP STP26NM60ND TAB STW26NM60ND 100% avalanche tested 3 3 2 ... See More ⇒
stb26nm60n stp26nm60n.pdf
STB26NM60N, STP26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFETs in D PAK and TO-220 packages Datasheet - production data Features Order code V R max I DS DS(on) D TAB STB26NM60N TAB 600 V 0.165 20 A STP26NM60N 100% avalanche tested 3 Low input capacitance and gate charge D2PAK TO-220 2 1 Low gate input resistance Application... See More ⇒
stb26nm60n stf26nm60n stp26nm60n stw26nm60n.pdf
STB26NM60N, STF26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 , 20 A MDmesh II Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features RDS(on) Type VDSS ID max 3 2 3 1 2 STB26NM60N 600 V ... See More ⇒
Detailed specifications: STB23NM60N, STB24N60DM2, STB24N60M2, STB24N65M2, STB25N80K5, STB25NM50N-1, STB25NM60N, STB25NM60N-1, STP80NF70, STB27NM60ND, STB28N60M2, STB28N65M2, STB28NM60ND, STB2N62K3, STB30NF10T4, STB30NF20L, STB30NM60N
Keywords - STB26NM60ND MOSFET specs
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History: BL18N20-P
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