STB30NM60N MOSFET. Datasheet pdf. Equivalent
Type Designator: STB30NM60N
Marking Code: 30NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 25 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 91 nC
Rise Time (tr): 24 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Package: D2PAK
STB30NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB30NM60N Datasheet (PDF)
stb30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf
STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V
stb30nm60n sti30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf
STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V
stw30nm60nd stp30nm60nd stf30nm60nd sti30nm60nd stb30nm60nd.pdf
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STB30NM50N,STI30NM50N,STF30NM50NSTP30NM50N, STW30NM50NN-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) VDSS Type ID(@Tjmax)max33121STB30NM50N 550 V
stb30ns15.pdf
STB30NS15N-CHANNEL 150V - 0.075 - 30A D2PAKLOW GATE CHARGE STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTB30NS15 150 V
stb30nf10.pdf
STB30NF10STP30NF10 STP30NF10FPN-CHANNEL 100V - 0.038 - 35A TO-220/TO-220FP/D2PAKLOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB30NF10 100 V
stb30nf10 stp30nf10 stp30nf10fp.pdf
STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V
stp30nf20 stb30nf20 stw30nf20.pdf
STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me
stb30nf20l.pdf
STB30NF20LN-channel 200 V, 0.065 , 30 A STripFET Power MOSFET in D2PAK packageDatasheet production dataFeaturesOrder code VDSS RDS(on) ID PTOTSTB30NF20L 200 V 0.075 30 A 150 WTAB Gate charge minimized 100% avalanche tested3 Excellent figure of merit (RDS* Qg)1 Very good manufacturing repeatabilityDPAK Very low intrinsic capacitanceApp
stb30nf10t4 stb30nf10 stp30nf10 stp30nf10fp.pdf
STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V
stb30n65m5 stf30n65m5 sti30n65m5 stp30n65m5 stw30n65m5.pdf
STB30N65M5, STF30N65M5, STI30N65M5STP30N65M5, STW30N65M5N-channel 650 V, 0.125 , 22 A, MDmesh V Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB30N65M5 710 V
stb30n10-.pdf
STB30N10N - CHANNEL 100V - 0.06 - 30A - D2PAK POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTB30N10 100 V
stp30nf20 stw30nf20 stb30nf20.pdf
STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me
stb30nf20.pdf
isc N-Channel MOSFET Transistor STB30NF20FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
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