STB34N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB34N65M5
Marking Code: 34N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 28 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 62.5 nC
Rise Time (tr): 8.7 nS
Drain-Source Capacitance (Cd): 75 pF
Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm
Package: D2PAK
STB34N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB34N65M5 Datasheet (PDF)
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