STB35NF10T4 Specs and Replacement

Type Designator: STB35NF10T4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: D2PAK

STB35NF10T4 substitution

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STB35NF10T4 datasheet

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 stb35nf10t4.pdf pdf_icon

STB35NF10T4

STB35NF10 STP35NF10 N-channel 100V - 0.030 - 40A - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB35NF10 100V ... See More ⇒

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 stb35nf10 stp35nf10.pdf pdf_icon

STB35NF10T4

STB35NF10 STP35NF10 N-channel 100V - 0.030 - 40A - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB35NF10 100V ... See More ⇒

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 stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf pdf_icon

STB35NF10T4

STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ Type RDS(on) max ID TJMAX 3 3 1 2 3 1 2 STB35N65M5 710 V ... See More ⇒

 8.2. Size:761K  st
 stb35n60dm2.pdf pdf_icon

STB35NF10T4

STB35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a D PAK package Datasheet - production data Features R DS(on) Order code VDS ID PTOT TAB max. STB35N60DM2 600 V 0.110 28 A 210 W 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance D2PAK 100% avalanche tested Extremely ... See More ⇒

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Detailed specifications: STB30NF20L, STB30NM60N, STB31N65M5, STB32NM50N, STB33N60M2, STB33N65M2, STB34N65M5, STB34NM60N, 20N50, STB36NF06LT4, STB36NM60ND, STB38N65M5, STB3NK60ZT4, STB40N20, STB40N60M2, STB40NF10LT4, STB40NF10T4

Keywords - STB35NF10T4 MOSFET specs

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