All MOSFET. STB35NF10T4 Datasheet

 

STB35NF10T4 Datasheet and Replacement


   Type Designator: STB35NF10T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: D2PAK
 

 STB35NF10T4 substitution

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STB35NF10T4 Datasheet (PDF)

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 stb35nf10t4.pdf pdf_icon

STB35NF10T4

STB35NF10STP35NF10N-channel 100V - 0.030 - 40A - D2PAK/TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB35NF10 100V

 5.1. Size:421K  st
 stb35nf10 stp35nf10.pdf pdf_icon

STB35NF10T4

STB35NF10STP35NF10N-channel 100V - 0.030 - 40A - D2PAK/TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB35NF10 100V

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 stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf pdf_icon

STB35NF10T4

STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V

 8.2. Size:761K  st
 stb35n60dm2.pdf pdf_icon

STB35NF10T4

STB35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code VDS ID PTOT TAB max. STB35N60DM2 600 V 0.110 28 A 210 W 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance D2PAK 100% avalanche tested Extremely

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Datasheet: STB30NF20L , STB30NM60N , STB31N65M5 , STB32NM50N , STB33N60M2 , STB33N65M2 , STB34N65M5 , STB34NM60N , 2N60 , STB36NF06LT4 , STB36NM60ND , STB38N65M5 , STB3NK60ZT4 , STB40N20 , STB40N60M2 , STB40NF10LT4 , STB40NF10T4 .

History: RU4089R | IRF7324PBF-1

Keywords - STB35NF10T4 MOSFET datasheet

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