All MOSFET. STB35NF10T4 Datasheet

 

STB35NF10T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB35NF10T4
   Marking Code: B35NF10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: D2PAK

 STB35NF10T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB35NF10T4 Datasheet (PDF)

 ..1. Size:413K  st
stb35nf10t4.pdf

STB35NF10T4 STB35NF10T4

STB35NF10STP35NF10N-channel 100V - 0.030 - 40A - D2PAK/TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB35NF10 100V

 5.1. Size:421K  st
stb35nf10 stp35nf10.pdf

STB35NF10T4 STB35NF10T4

STB35NF10STP35NF10N-channel 100V - 0.030 - 40A - D2PAK/TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB35NF10 100V

 8.1. Size:1202K  st
stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf

STB35NF10T4 STB35NF10T4

STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V

 8.2. Size:761K  st
stb35n60dm2.pdf

STB35NF10T4 STB35NF10T4

STB35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code VDS ID PTOT TAB max. STB35N60DM2 600 V 0.110 28 A 210 W 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance D2PAK 100% avalanche tested Extremely

 8.3. Size:204K  inchange semiconductor
stb35n65m5.pdf

STB35NF10T4 STB35NF10T4

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STB35N65M5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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