All MOSFET. STB60NF06T4 Datasheet

 

STB60NF06T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB60NF06T4
   Marking Code: B60NF06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 108 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: D2PAK

 STB60NF06T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB60NF06T4 Datasheet (PDF)

 ..1. Size:415K  st
stb60nf06-1 stb60nf06t4.pdf

STB60NF06T4
STB60NF06T4

STB60NF06STB60NF06-1N-channel 60V - 0.014 - 60A - D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06-1 60V

 5.1. Size:425K  st
stb60nf06.pdf

STB60NF06T4
STB60NF06T4

STB60NF06N-CHANNEL 60V - 0.014 - 60A D2PAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTB60NF06 60V

 5.2. Size:514K  st
stb60nf06lt4 stb60nf06l stp60nf06l stp60nf06lfp stp60nf06lfp.pdf

STB60NF06T4
STB60NF06T4

STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V

 5.3. Size:514K  st
stb60nf06l stp60nf06l stp60nf06lfp.pdf

STB60NF06T4
STB60NF06T4

STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V

 5.4. Size:419K  st
stb60nf06 stb60nf06-1.pdf

STB60NF06T4
STB60NF06T4

STB60NF06STB60NF06-1N-channel 60V - 0.014 - 60A - D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06-1 60V

 5.5. Size:472K  st
stb60nf06l.pdf

STB60NF06T4
STB60NF06T4

STB60NF06LSTP60NF06L STP60NF06LFPN-CHANNEL 60V - 0.012 - 60A TO-220/TO-220FP/D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB60NF06L 60 V

 5.6. Size:1410K  cn vbsemi
stb60nf06.pdf

STB60NF06T4
STB60NF06T4

STB60NF06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc

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History: SPP11N65C3 | SI1308EDL | FDMS86520L

 

 
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