STB60NF10-1 MOSFET Datasheet: N-Ch, 100V, 80A. Full specification with pinout and replacement list

STB60NF10-1 Specs and Replacement

Type Designator: STB60NF10-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: I2PAK

STB60NF10-1 substitution

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STB60NF10-1 datasheet

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