STB80NF55-08-1 Datasheet and Replacement
Type Designator: STB80NF55-08-1
Marking Code: B80NF55-08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 115 nC
trⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 800 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: I2PAK
STB80NF55-08-1 Datasheet (PDF)
stb80nf55-08-1.pdf
STP80NF55-08STB80NF55-08 STB80NF55-08-1N-CHANNEL 55V - 0.0065 - 80A D2PAK/I2PAK/TO-220STripFET II POWER MOSFETTable 1: General Features Figure 1:PackageTYPE VDSS RDS(on) IDSTB80NF55-08/-1 55 V
stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf
STB80NF55-08T4STP80NF55-08, STW80NF55-08N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247STripFET Power MOSFETFeaturesRDS(on) Type VDSS IDmax3STB80NF55-08T4 55 V
stb80nf55-06 stb80nf55-06-1 stp80nf55-06 stp80nf55-06fp.pdf
STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V
stb80nf55-06t.pdf
STB80NF55-06TN-channel 55 V, 5 m, 80 A STripFET II Power MOSFETin a DPAK packageFeaturesOrder code VDSS RDS(on) max. IDSTB80NF55-06T 55 V
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP9770GT-HF | WM02P06H | KIA7N60H-262 | CJP01N65B | SI4404DY | UF830 | 25P10G
Keywords - STB80NF55-08-1 MOSFET datasheet
STB80NF55-08-1 cross reference
STB80NF55-08-1 equivalent finder
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STB80NF55-08-1 replacement
History: AP9770GT-HF | WM02P06H | KIA7N60H-262 | CJP01N65B | SI4404DY | UF830 | 25P10G
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