All MOSFET. STB9NK60ZDT4 Datasheet

 

STB9NK60ZDT4 Datasheet and Replacement


   Type Designator: STB9NK60ZDT4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13.6 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: D2PAK
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STB9NK60ZDT4 Datasheet (PDF)

 ..1. Size:409K  st
 stb9nk60zdt4 stp9nk60zd.pdf pdf_icon

STB9NK60ZDT4

STB9NK60ZDSTF9NK60ZD - STP9NK60ZDN-channel 600 V - 0.85 - 7 A - D2PAK, TO-220FP, TO-220SuperFREDMesh Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTB9NK60ZD 600 V

 4.1. Size:414K  st
 stb9nk60zd stf9nk60zd stp9nk60zd.pdf pdf_icon

STB9NK60ZDT4

STB9NK60ZDSTF9NK60ZD - STP9NK60ZDN-channel 600 V - 0.85 - 7 A - D2PAK, TO-220FP, TO-220SuperFREDMesh Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTB9NK60ZD 600 V

 5.1. Size:430K  st
 stb9nk60z-1.pdf pdf_icon

STB9NK60ZDT4

STP9NK60Z - STP9NK60ZFPSTB9NK60Z - STB9NK60Z-1N-CHANNEL 600V - 0.85 - 7A TO-220/FP/D2PAK/I2PAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID Pw

 5.2. Size:503K  st
 stb9nk60z stp9nk60z stp9nk60zfp.pdf pdf_icon

STB9NK60ZDT4

STB9NK60Z, STP9NK60Z, STP9NK60ZFPN-channel 600 V, 0.85 typ., 7 A Zener-protected SuperMESH Power MOSFET in DPAK, TO-220 and TO-220FP packagesDatasheet - production dataFeaturesTABTABOrder codes VDS RDS(on) max ID PTOT3STB9NK60ZT4312125 W600 1STP9NK60Z 0.95 7 A2VD PAKTO-220STP9NK60ZFP 30 W Extremely high dv/dt capability Improved ESD

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History: BUK7214-75B | WMM07N65C4 | NP180N04TUJ | APT10021JFLL | SM4186T9RL | SSW65R190S2 | NCE30P12BS

Keywords - STB9NK60ZDT4 MOSFET datasheet

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