STB9NK60ZDT4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB9NK60ZDT4
SMD Transistor Code: B9NK60ZD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 41 nC
Rise Time (tr): 13.6 nS
Drain-Source Capacitance (Cd): 135 pF
Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm
Package: D2PAK
STB9NK60ZDT4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB9NK60ZDT4 Datasheet (PDF)
1.1. stb9nk60zt4.pdf 
Size:503K _upd
STB9NK60Z, STP9NK60Z, STP9NK60ZFP N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperMESH™ Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet - production data Features TAB TAB Order codes VDS RDS(on) max ID PTOT 3 STB9NK60ZT4 3 1 2 125 W 600 1 STP9NK60Z 0.95 Ω 7 A 2 V D PAK TO-220 STP9NK60ZFP 30 W ■Extremely high dv/dt capability ■Improved ESD
1.2. stb9nk60z-1.pdf Size:430K _upd
STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw < 0.95 Ω STP9NK60Z 600 V 7 A 125 W STP9NK60ZFP 600 V < 0.95 Ω 7 A 30 W STB9NK60Z 600 V 7 A 125 W < 0.95 Ω STB9NK60Z-1 600 V 7 A 125 W 3 < 0.95 Ω 2 1 TYPICAL RDS(on) = 0.85 Ω TO-220 TO-220FP EXTREMELY HIG
1.3. stb9nk60zdt4.pdf Size:409K _upd
STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600 V - 0.85 Ω - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMeshâ„¢ Power MOSFET Features RDS(on) Type VDSS ID Pw max STB9NK60ZD 600 V < 0.95 Ω 7 A 125 W STF9NK60ZD 600 V < 0.95 Ω 7 A 30 W 3 3 2 2 1 1 STP9NK60ZD 600 V < 0.95 Ω 7 A 125 W TO-220FP TO-220 â– Very high dv/dt capability 3 1 â– 100% avalanche tested D²PAK â–
1.4. stb9nk60zd stf9nk60zd stp9nk60zd.pdf Size:414K _st
STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600 V - 0.85 ? - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMesh™ Power MOSFET Features RDS(on) Type VDSS ID Pw max STB9NK60ZD 600 V < 0.95 ? 7 A 125 W STF9NK60ZD 600 V < 0.95 ? 7 A 30 W 3 3 2 2 1 1 STP9NK60ZD 600 V < 0.95 ? 7 A 125 W TO-220FP TO-220 ¦ Very high dv/dt capability 3 1 ¦ 100% avalanche tested D?PAK ¦ Gate charge minimiz
1.5. stp9nk60z stp9nk60zfp stb9nk60z stb9nk60z-1.pdf Size:581K _st
STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 N-CHANNEL 600V - 0.85? - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw < 0.95 ? STP9NK60Z 600 V 7 A 125 W STP9NK60ZFP 600 V < 0.95 ? 7 A 30 W STB9NK60Z 600 V 7 A 125 W < 0.95 ? STB9NK60Z-1 600 V 7 A 125 W 3 < 0.95 ? 2 1 TYPICAL RDS(on) = 0.85 ? TO-220 TO-220FP EXTREMELY HIGH dv/dt CAPABILIT
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