IRFS644B Datasheet and Replacement
Type Designator: IRFS644B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-220F
IRFS644B substitution
IRFS644B Datasheet (PDF)
irfs644b.pdf
November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to
irf644b irfs644b.pdf
November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to
Datasheet: IRFS4710PBF , IRFS52N15DPBF , IRFS5615PBF , IRFS5620PBF , IRFS59N10DPBF , IRFS614B , IRFS634B , IRFS640B , 4N60 , IRFS654B , IRFS730B , IRFS740B , IRFS7430-7PPBF , IRFS7430PBF , IRFS7434PBF , IRFS7434-7PPBF , IRFS7437-7PPBF .
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