All MOSFET. IRFS7437-7PPBF Datasheet

 

IRFS7437-7PPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFS7437-7PPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 195 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 1097 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: TO-263CA-7

 IRFS7437-7PPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS7437-7PPBF Datasheet (PDF)

 ..1. Size:262K  international rectifier
 irfs7437-7ppbf.pdf

IRFS7437-7PPBF IRFS7437-7PPBF

StrongIRFETIRFS7437-7PPbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsDl PWM Inverterized topologies VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.1ml Half-bridge and full-bridge topologies max. 1.4ml Electronic ballast applicationsGID (Silicon Limited) 295Al Synchronous rectifier applicationsl Reso

 ..2. Size:262K  infineon
 irfs7437-7ppbf.pdf

IRFS7437-7PPBF IRFS7437-7PPBF

StrongIRFETIRFS7437-7PPbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsDl PWM Inverterized topologies VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.1ml Half-bridge and full-bridge topologies max. 1.4ml Electronic ballast applicationsGID (Silicon Limited) 295Al Synchronous rectifier applicationsl Reso

 6.1. Size:292K  international rectifier
 irfs7437pbf irfsl7437pbf.pdf

IRFS7437-7PPBF IRFS7437-7PPBF

StrongIRFETIRFS7437PbFIRFSL7437PbFApplicationsl Brushed Motor drive applicationsl BLDC Motor drive applicationsHEXFET Power MOSFETl Battery powered circuitsVDSS 40VDl Half-bridge and full-bridge topologiesl Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches GID (Silicon Limite

 6.2. Size:292K  infineon
 irfs7437pbf irfsl7437pbf.pdf

IRFS7437-7PPBF IRFS7437-7PPBF

StrongIRFETIRFS7437PbFIRFSL7437PbFApplicationsl Brushed Motor drive applicationsl BLDC Motor drive applicationsHEXFET Power MOSFETl Battery powered circuitsVDSS 40VDl Half-bridge and full-bridge topologiesl Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches GID (Silicon Limite

 6.3. Size:252K  inchange semiconductor
 irfs7437.pdf

IRFS7437-7PPBF IRFS7437-7PPBF

isc N-Channel MOSFET Transistor IRFS7437FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTH30N60P

 

 
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