IRFS7730PBF MOSFET Datasheet: N-Ch, 75V, 195A. Full specification with pinout and replacement list

IRFS7730PBF Specs and Replacement

Type Designator: IRFS7730PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 195 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 1120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TO-263

IRFS7730PBF substitution

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IRFS7730PBF datasheet

..1. Size:657K international rectifier
irfb7730 irfs7730pbf irfsl7730pbf.pdf pdf_icon

StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6m G Synchronous rectifier applications ID (Silicon Limited) 246A ... See More ⇒

..2. Size:657K international rectifier
irfb7730pbf irfs7730pbf irfsl7730pbf.pdf pdf_icon

6.1. Size:518K international rectifier
irfs7730-7ppbf.pdf pdf_icon

StrongIRFET IRFS7730-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V BLDC motor drive applications D RDS(on) typ. Battery powered circuits 1.70m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 269A S Resonant mode... See More ⇒

6.2. Size:258K inchange semiconductor
irfs7730.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS7730 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒