IRFS7730-7PPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS7730-7PPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
|Id|ⓘ - Maximum Drain Current: 240 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 285 nC
trⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 1135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO-263
IRFS7730-7PPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS7730-7PPBF Datasheet (PDF)
irfs7730-7ppbf.pdf
StrongIRFET IRFS7730-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V BLDC motor drive applications DRDS(on) typ. Battery powered circuits 1.70m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 269A S Resonant mode
irfs7730-7ppbf.pdf
StrongIRFET IRFS7730-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V BLDC motor drive applications DRDS(on) typ. Battery powered circuits 1.70m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 269A S Resonant mode
irfb7730 irfs7730pbf irfsl7730pbf.pdf
StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A
irfb7730pbf irfs7730pbf irfsl7730pbf.pdf
StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A
irfs7730.pdf
isc N-Channel MOSFET Transistor IRFS7730FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: AOK22N50L | SFG170N10PF | SFF80N20NUB
History: AOK22N50L | SFG170N10PF | SFF80N20NUB
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918