All MOSFET. IRFSL3006PBF Datasheet

 

IRFSL3006PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFSL3006PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 195 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 182 nS
   Cossⓘ - Output Capacitance: 1020 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-262

 IRFSL3006PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFSL3006PBF Datasheet (PDF)

 ..1. Size:361K  international rectifier
irfs3006pbf irfsl3006pbf.pdf

IRFSL3006PBF
IRFSL3006PBF

PD - 96188IRFS3006PbFIRFSL3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/

 ..2. Size:361K  infineon
irfs3006pbf irfsl3006pbf.pdf

IRFSL3006PBF
IRFSL3006PBF

PD - 96188IRFS3006PbFIRFSL3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/

 6.1. Size:457K  international rectifier
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

IRFSL3006PBF
IRFSL3006PBF

PD - 97377IRFB3004PbFIRFS3004PbFIRFSL3004PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited)340AcBenefitsID (Package Limited)195A Sl Improved Gate,

 6.2. Size:457K  infineon
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

IRFSL3006PBF
IRFSL3006PBF

PD - 97377IRFB3004PbFIRFS3004PbFIRFSL3004PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited)340AcBenefitsID (Package Limited)195A Sl Improved Gate,

 6.3. Size:711K  infineon
auirfs3004 auirfsl3004.pdf

IRFSL3006PBF
IRFSL3006PBF

AUIRFS3004 AUTOMOTIVE GRADE AUIRFSL3004 HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.4m Ultra Low On-Resistance max. 175C Operating Temperature 1.75m Fast Switching ID (Silicon Limited) 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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