IRFSL3207ZPBF MOSFET Datasheet: N-Ch, 75V, 120A. Full specification with pinout and replacement list

IRFSL3207ZPBF Specs and Replacement

   Type Designator: IRFSL3207ZPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO-262

IRFSL3207ZPBF substitution

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IRFSL3207ZPBF datasheet

..1. Size:330K international rectifier
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf pdf_icon

IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic... See More ⇒

4.1. Size:704K infineon
auirfs3207z auirfsl3207z.pdf pdf_icon

... See More ⇒

5.1. Size:379K international rectifier
irfsl3207.pdf pdf_icon

PD - 96893C IRFB3207 IRFS3207 IRFSL3207 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching 3.6m RDS(on) typ. l Hard Switched and High Frequency Circuits G Benefits max. 4.5m l Worldwide Best RDS(on) in TO-220 S ID 180A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedn... See More ⇒

5.2. Size:379K international rectifier
irfb3207 irfs3207 irfsl3207.pdf pdf_icon