All MOSFET. IRFU3704PBF Datasheet

 

IRFU3704PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFU3704PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 1085 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-251

 IRFU3704PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFU3704PBF Datasheet (PDF)

 ..1. Size:221K  international rectifier
irfr3704pbf irfu3704pbf.pdf

IRFU3704PBF
IRFU3704PBF

PD - 95034AIRFR3704PbFSMPS MOSFETIRFU3704PbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 20V 9.5m 75Afor Telecom and Industrial usel High Frequency Buck Converters forComputer Processor Powerl 100% RG Testedl Lead-FreeBenefitsl Ultra-Low RDS(on)l Very Low Gate Impedancel Fully

 6.1. Size:266K  international rectifier
irfr3704zpbf irfu3704zpbf.pdf

IRFU3704PBF
IRFU3704PBF

PD - 95442AIRFR3704ZPbFIRFU3704ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 8.4m 9.3nC for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pak

 6.2. Size:156K  international rectifier
irfr3704 irfu3704.pdf

IRFU3704PBF
IRFU3704PBF

PD - 93887DIRFR3704SMPS MOSFETIRFU3704ApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 20V 9.5m 75Afor Telecom and Industrial usel High Frequency Buck Converters for Computer Processor Powerl 100% RG TestedBenefitsl Ultra-Low RDS(on)l Very Low Gate Impedancel Fully Characterized Aval

 6.3. Size:261K  inchange semiconductor
irfu3704z.pdf

IRFU3704PBF
IRFU3704PBF

isc N-Channel MOSFET Transistor IRFU3704ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SWP030R04VT | FSS234D

 

 
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