All MOSFET. IRFU3707ZPBF Datasheet

 

IRFU3707ZPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFU3707ZPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.25 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 9.6 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-251

 IRFU3707ZPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFU3707ZPBF Datasheet (PDF)

 ..1. Size:363K  international rectifier
irfu3707zpbf.pdf

IRFU3707ZPBF IRFU3707ZPBF

PD - 95443BIRFR3707ZPbFIRFU3707ZPbFApplicationsl High Frequency Synchronous Buck HEXFET Power MOSFETConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC Converters with Synchronous Rectification30V 9.5m 9.6nC for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Chara

 ..2. Size:546K  infineon
irfr3707zpbf irfu3707zpbf.pdf

IRFU3707ZPBF IRFU3707ZPBF

IRFR3707ZPbF IRFU3707ZPbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck VDSS 30V Converters for Computer Processor Power RDS(on) max 9.5m High Frequency Isolated DC-DC Converters with Synchronous Rectification Qg 9.6nC for Telecom and Industrial Use D D S S D G G I- Pak D- Pak Benefits IRFU3707ZPbF IRFR3707ZPbF

 5.1. Size:295K  international rectifier
irfr3707zcpbf irfu3707zcpbf.pdf

IRFU3707ZPBF IRFU3707ZPBF

PD - 96045IRFR3707ZCPbFIRFU3707ZCPbFApplicationsl High Frequency Synchronous Buck HEXFET Power MOSFETConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC Converters with Synchronous Rectification30V 9.5m 9.6nC for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Char

 5.2. Size:261K  inchange semiconductor
irfu3707z.pdf

IRFU3707ZPBF IRFU3707ZPBF

isc N-Channel MOSFET Transistor IRFU3707ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 6.1. Size:139K  international rectifier
irfr3707 irfu3707.pdf

IRFU3707ZPBF IRFU3707ZPBF

PD - 93934BIRFR3707SMPS MOSFETIRFU3707ApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectificationfor Telecom and Industrial use 30V 13m 61A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltageand Current

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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