IRFU420APBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFU420APBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 3.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 53
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3
Ohm
Package:
TO-251
IRFU420APBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFU420APBF
Datasheet (PDF)
..1. Size:248K international rectifier
irfr420apbf irfu420apbf.pdf 
PD - 95075ASMPS MOSFETIRFR420APbFIRFU420APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) max IDl High speed power switching500V 3.0 3.3Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitanc
..2. Size:265K vishay
irfr420apbf irfu420apbf sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac
6.1. Size:241K vishay
irfr420a irfu420a sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac
6.2. Size:251K infineon
irfr420a irfu420a sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and DynamicdV/dt RuggednessQg (Max.) (nC) 17 Fully Characterized Capacitance andQgs (nC) 4.3Avalanche Voltage and CurrentQgd (nC) 8.5
7.1. Size:879K international rectifier
irfr420 irfu420.pdf
PD - 95078AIRFR420PbFIRFU420PbF Lead-Free1/7/05Document Number: 91275 www.vishay.com1IRFR/U420PbFDocument Number: 91275 www.vishay.com2IRFR/U420PbFDocument Number: 91275 www.vishay.com3IRFR/U420PbFDocument Number: 91275 www.vishay.com4IRFR/U420PbFDocument Number: 91275 www.vishay.com5IRFR/U420PbFDocument Number: 91275 www.vishay.com6IRFR/U420
7.2. Size:647K fairchild semi
irfr420b irfu420b.pdf
November 2001IRFR420B / IRFU420B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
7.3. Size:1841K vishay
irfr420 irfu420 sihfr420 sihfu420.pdf
IRFR420, IRFU420, SiHFR420, SiHFU420Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt Rating Repetitive Avalanche RatedQg (Max.) (nC) 19 Surface Mount (IRFR420, SiHFR420)Qgs (nC) 3.3 Straight Lead (IRFU420, SiHFU420)Qgd (nC) 13 Available in Tap
7.4. Size:1086K vishay
irfr420pbf irfr420trpbf irfu420pbf sihfr420 sihfu420.pdf
IRFR420, IRFU420, SiHFR420, SiHFU420www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0 Surface Mount (IRFR420, SiHFR420) Straight Lead (IRFU420, SiHFU420)Qg (Max.) (nC) 19 Available in Tape and ReelQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease
7.5. Size:272K inchange semiconductor
irfu420.pdf
isc N-Channel MOSFET Transistor IRFU420FEATURESDrain Current I = 2.4A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
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