IXFM50N20 PDF and Equivalents Search

 

IXFM50N20 Specs and Replacement

Type Designator: IXFM50N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO204

IXFM50N20 substitution

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IXFM50N20 datasheet

 ..1. Size:104K  ixys
 ixfh42n20 ixfm42n20 ixfh58n20 ixfm58n20 ixft50n20 ixfh50n20 ixfm50n20 ixft58n20.pdf pdf_icon

IXFM50N20

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs 200 V 42 A 60mW IXFH/IXFM42N20 200 V 50 A 45mW IXFH/IXFM/IXFT50N20 200 V 58 A 40mW IXFH/IXFT58N20 N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V TO-268 (D3) Case Style VG... See More ⇒

Detailed specifications: IXFM15N60, IXFM15N80, IXFM20N60, IXFM21N50, IXFM24N50, IXFM35N30, IXFM40N30, IXFM42N20, IRF520, IXFM67N10, IXFM6N100, IXFM6N90, IXFM75N10, IXFM7N80, IXFN100N25, IXFN106N20, IXFN110N20

Keywords - IXFM50N20 MOSFET specs

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