STC4516 MOSFET Datasheet: NP-Ch, 30V, 7.2A. Full specification with pinout and replacement list

STC4516 Specs and Replacement

Type Designator: STC4516

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOP-8

STC4516 substitution

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STC4516 datasheet

..1. Size:934K stansontech
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STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURE SOP-8 P Channel Top View -30V/-7.2A... See More ⇒

9.1. Size:409K semtron
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STC4545 30V N & P Pair Enhancement Mode MOSFET DESCRIPTION FEATURE The STC4545 is the N & P-Channel enhancement N-Channel mode power field effect transistor is produced using 30V / 6.8A, RDS(ON) =18m (typ.)@VGS =10V high cell density. advanced trench technology to 30V / 6.0A, RDS(ON) =26m (typ.)@VGS =4.5V provide excellent RDS(ON). This device iswidely prefe... See More ⇒

9.2. Size:629K stansontech
stc4567.pdf pdf_icon

STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application su... See More ⇒

9.3. Size:448K stansontech
stc4539.pdf pdf_icon

STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application ... See More ⇒

Detailed specifications: IRFU420B, IRFU420PBF, IRFU430APBF, IRFU4510PBF, IRFU4615PBF, IRFU4620PBF, IRFU48ZPBF, IRFU5305PBF, IRF3205, STC4539, STC4545, STC4567, STC4606, STC4614, STC6332, STC6602, STC6614