STC4516 Datasheet and Replacement. Cross Reference Search

STC4516 Datasheet (PDF)

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STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURE SOP-8P Channel Top View -30V/-7.2A

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STC4545 30V N & P Pair Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STC4545 is the N & P-Channel enhancement N-Channel mode power field effect transistor is produced using 30V / 6.8A, RDS(ON) =18m(typ.)@VGS =10V high cell density. advanced trench technology to 30V / 6.0A, RDS(ON) =26m(typ.)@VGS =4.5V provide excellent RDS(ON). This device iswidely prefe

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STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application su

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STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

Datasheet: IRFU420B , IRFU420PBF , IRFU430APBF , IRFU4510PBF , IRFU4615PBF , IRFU4620PBF , IRFU48ZPBF , IRFU5305PBF , IRF3205 , STC4539 , STC4545 , STC4567 , STC4606 , STC4614 , STC6332 , STC6602 , STC6614 .