All MOSFET. IXFM67N10 Datasheet

 

IXFM67N10 Datasheet and Replacement


   Type Designator: IXFM67N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 67 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO204
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IXFM67N10 Datasheet (PDF)

 ..1. Size:94K  ixys
 ixfh67n10 ixfh75n10 ixfm67n10 ixfm75n10.pdf pdf_icon

IXFM67N10

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 67 N10 100 V 67 A 25 mWPower MOSFETsIXFH/IXFM 75 N10 100 V 75 A 20 mWtrr 200 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25

 9.1. Size:77K  ixys
 ixfh6n90 ixfh6n100 ixfm6n90 ixfm6n100.pdf pdf_icon

IXFM67N10

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 6 N90 900 V 6 A 1.8 WPower MOSFETsIXFH/IXFM 6 N100 1000 V 6 A 2.0 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 6N90 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 6N100 1000 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID2

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History: BSZ035N03LSG | SVF9N90F

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