IXFM67N10 PDF and Equivalents Search

 

IXFM67N10 Specs and Replacement

Type Designator: IXFM67N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO204

IXFM67N10 substitution

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IXFM67N10 datasheet

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 ixfh67n10 ixfh75n10 ixfm67n10 ixfm75n10.pdf pdf_icon

IXFM67N10

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IXFM67N10

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 6 N90 900 V 6 A 1.8 W Power MOSFETs IXFH/IXFM 6 N100 1000 V 6 A 2.0 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 6N90 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 6N100 1000 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID2... See More ⇒

Detailed specifications: IXFM15N80, IXFM20N60, IXFM21N50, IXFM24N50, IXFM35N30, IXFM40N30, IXFM42N20, IXFM50N20, IRF2807, IXFM6N100, IXFM6N90, IXFM75N10, IXFM7N80, IXFN100N25, IXFN106N20, IXFN110N20, IXFN120N20

Keywords - IXFM67N10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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