STD100N10F7
MOSFET. Datasheet pdf. Equivalent
Type Designator: STD100N10F7
Marking Code: 100N10F7
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 120
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 80
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 61
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 823
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
DPAK
STD100N10F7
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD100N10F7
Datasheet (PDF)
..1. Size:1657K st
stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf 
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220Datasheet - production dataFeaturesTAB TABRDS(on) 3Order codes VDS max ID PTOT131 DPAKSTB100N10F7 80 A 120 WD2PAKSTD100N10F7 80 A 120WTAB100 V 0.008 STF100N10F7 45 A 30 WSTP100N10F7 80A 150 W
..2. Size:648K st
stb100n10f7 std100n10f7 stf100n10f7 sti100n10f7 stp100n10f7.pdf
STB100N10F7, STD100N10F7, STF100N10F7STI100N10F7, STP100N10F7DatasheetN-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packagesTABTAB Features2 31VDS RDS(on) max. IDOrder codes Package31D2PAK DPAKSTB100N10F7 80 AD2PAKTAB TABSTD100N10F7 80 A DPAKSTF100N10F7 100 V 8.0 m 45 A TO-220FP33231 2
..3. Size:243K inchange semiconductor
std100n10f7.pdf
isc N-Channel MOSFET Transistor STD100N10F7FEATURESStatic drain-source on-resistance:RDS(on)8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat
7.1. Size:331K st
std100n3lf3.pdf
STD100N3LF3N-channel 30 V, 0.0045 , 80 A, DPAKplanar STripFET II Power MOSFETFeaturesType VDSSS RDS(on) ID PwSTD100N3LF3 30 V
7.2. Size:488K st
std100nh03lt4.pdf
STD100NH03LN-channel 30V - 0.005 - 60A - DPAKSTripFET III Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD100NH03L 30V
7.3. Size:489K st
std100nh02l.pdf
STD100NH02LSTD100NH02L-1N-channel 24V - 0.0042 - 60A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD100NH02L 24V
7.4. Size:457K st
std100n03lt4.pdf
STD100N03LSTD100N03L-1N-channel 30V - 0.0045 - 80A - DPAK - IPAKPlanar STripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDType PwSTD100N03L 30 V
7.5. Size:488K st
std100nh02lt4.pdf
STD100NH02LSTD100NH02L-1N-channel 24V - 0.0042 - 60A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD100NH02L 24V
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