All MOSFET. STD10N60M2 Datasheet

 

STD10N60M2 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD10N60M2

Marking Code: 10N60M2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 85 W

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13.5 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 22 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: DPAK

STD10N60M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD10N60M2 Datasheet (PDF)

0.1. stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf Size:1627K _st

STD10N60M2
STD10N60M2

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 Ω 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 • Extremely low gate ch

8.1. std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf Size:901K _st

STD10N60M2
STD10N60M2

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Order codes ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V < 0.55 Ω 10 A STP10NM60N 70 W STU10NM60N 3 ■ 100% avalanche tested 2 3 1 1 ■ Low input capacitance and gate charge

8.2. std10nm50n stf10nm50n stp10nm50n.pdf Size:951K _st

STD10N60M2
STD10N60M2

STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 Ω, 7 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 STD10NM50N 1 TO-220FP TO-220 STF10NM50N 550 V < 0.63 Ω 7 A STP10NM50N ■ 100% avalanche tested 3 ■ Low input capacitance and gate charge 1 ■ Low gate input resistance DPAK Application Switching app

 8.3. std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf Size:525K _st

STD10N60M2
STD10N60M2

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 3 1 2 STD10NM65N 710 V < 0.48 Ω 9 A 1 IPAK STF10NM65N 710 V < 0.48 Ω 9 A(1) TO-220 STP10NM65N 710 V < 0.48 Ω 9 A STU10NM65N 710 V < 0.48 Ω 9 A 3 1. Limited only by maximum temperature all

8.4. std10nf30.pdf Size:868K _st

STD10N60M2
STD10N60M2

STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 Ω typ., MESH OVERLAY™ Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID STD10NF30 300 V 0.33 Ω 10 A TAB • Designed for automotive applications and 3 AEC-Q101 qualified 1 • Gate charge minimized DPAK • Very low intrinsic capacitances Applications • Switching appli

 8.5. std10nf06l.pdf Size:302K _st

STD10N60M2
STD10N60M2

STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD10NF06L 60V <0.12Ω 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER 3 PACKAGE IN TAPE & REEL (SUFFIX “T4”) 1 DESCRIPTION DPAK This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been de- signed to mini

8.6. std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf Size:997K _st

STD10N60M2
STD10N60M2

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Type ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V < 0.55 Ω 8 A STP10NM60N 70 W STU10NM60N 3 ■ 100% avalanche tested 2 3 1 1 ■ Low input capacitance and gate charge IPAK

8.7. std10nf10-1 std10nf10t4 std10nf10.pdf Size:457K _st

STD10N60M2
STD10N60M2

STD10NF10 STD10NF10-1 N-channel 100V - 0.115Ω - 13A - DPAK - IPAK Low gate charge STripFET™ II Power MOSFET General features VDSSS RDS(on) ID Type STD10NF10 100V <0.13Ω 13A 3 3 STD10NF10-1 100V <0.13Ω 13A 2 1 1 ■ Exceptional dv/dt capability DPAK IPAK ■ Application oriented characterization Description This MOSFET series realized with STMicroelectronics unique ST

8.8. std10nm60n.pdf Size:208K _inchange_semiconductor

STD10N60M2
STD10N60M2

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM60N ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

8.9. std10nm65n.pdf Size:208K _inchange_semiconductor

STD10N60M2
STD10N60M2

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM65N ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(T

8.10. stu10n20 std10n20.pdf Size:120K _samhop

STD10N60M2
STD10N60M2

STU10N20 Green Product STD10N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 306 @ VGS=10V TO-252 and TO-251 Package. 200V 8A 328 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK (

8.11. stu10n25 std10n25.pdf Size:128K _samhop

STD10N60M2
STD10N60M2

STU10N25 Green Product STD10N25 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 250V 9A 258 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK ABS

8.12. stu10n10 std10n10.pdf Size:119K _samhop

STD10N60M2
STD10N60M2

STU10N10 Green Product STD10N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 620 @ VGS=10V TO-252 and TO-251 Package. 100V 5A 721 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( )

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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