All MOSFET. STD110N02R Datasheet

 

STD110N02R MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD110N02R
   Marking Code: T110N2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 23.6 nC
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 1105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: DPAK

 STD110N02R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD110N02R Datasheet (PDF)

 ..1. Size:93K  onsemi
 std110n02r.pdf

STD110N02R STD110N02R

NTD110N02R, STD110N02RPower MOSFET24 V, 110 A, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performancehttp://onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver LossV(BR)DSS RDS(on) TYP ID MAX Low Gate Charge24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements inHigh-Efficiency DC-DC Converter

 0.1. Size:131K  onsemi
 ntd110n02rg std110n02rt4g.pdf

STD110N02R STD110N02R

NTD110N02R, STD110N02RPower MOSFET24 V, 110 A, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver LossV(BR)DSS RDS(on) TYP ID MAX Low Gate Charge24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements inHigh-Efficiency DC-DC Converter

 7.1. Size:466K  st
 std110nh02l.pdf

STD110N02R STD110N02R

STD110NH02LN-channel 24V - 0.0044 - 80A - DPAKSTripFET III Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD110NH02L 24V

 7.2. Size:479K  st
 std110nh02lt4.pdf

STD110N02R STD110N02R

STD110NH02LN-channel 24V - 0.0044 - 80A - DPAKSTripFET III Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD110NH02L 24V

 7.3. Size:626K  st
 std110n8f6.pdf

STD110N02R STD110N02R

STD110N8F6N-channel 80 V, 0.0056 typ.,80 A, STripFET F6 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max ID PTOTTABSTD110N8F6 80 V 0.0065 80 A 167 W32 Very low on-resistance 1 Very low gate charge High avalanche ruggedness DPAK Low gate drive power lossApplicationsFigure 1. Internal schematic diagr

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 3SK194 | RFD15N06LE

 

 
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