IXFM6N90 PDF and Equivalents Search

 

IXFM6N90 Specs and Replacement

Type Designator: IXFM6N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO204

IXFM6N90 substitution

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IXFM6N90 datasheet

 ..1. Size:77K  ixys
 ixfh6n90 ixfh6n100 ixfm6n90 ixfm6n100.pdf pdf_icon

IXFM6N90

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 6 N90 900 V 6 A 1.8 W Power MOSFETs IXFH/IXFM 6 N100 1000 V 6 A 2.0 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 6N90 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 6N100 1000 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID2... See More ⇒

 9.1. Size:94K  ixys
 ixfh67n10 ixfh75n10 ixfm67n10 ixfm75n10.pdf pdf_icon

IXFM6N90

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Detailed specifications: IXFM21N50, IXFM24N50, IXFM35N30, IXFM40N30, IXFM42N20, IXFM50N20, IXFM67N10, IXFM6N100, IRFZ24N, IXFM75N10, IXFM7N80, IXFN100N25, IXFN106N20, IXFN110N20, IXFN120N20, IXFN130N30, IXFN150N15

Keywords - IXFM6N90 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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