STD150NH02L-1 Specs and Replacement
Type Designator: STD150NH02L-1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 224 nS
Cossⓘ -
Output Capacitance: 1126 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: IPAK
STD150NH02L-1 substitution
- MOSFET ⓘ Cross-Reference Search
STD150NH02L-1 datasheet
..1. Size:516K st
std150nh02l-1 std150nh02lt4.pdf 
STD150NH02L-1 STD150NH02L N-channel 24V - 0.003 - 150A - ClipPAK - IPAK STripFET IlI Power MOSFET General features VDSSS RDS(on) ID Type STD150NH02L 24V ... See More ⇒
3.1. Size:486K st
std150nh02l.pdf
STD150NH02L-1 STD150NH02L N-channel 24V - 0.003 - 150A - ClipPAK - IPAK STripFET IlI Power MOSFET General features VDSSS RDS(on) ID Type STD150NH02L 24V ... See More ⇒
7.1. Size:945K st
std150n3llh6 stp150n3llh6 stu150n3llh6.pdf
STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET Features Type VDSS RDS(on) max ID STD150N3LLH6 30 V 0.0028 80 A 3 3 2 STP150N3LLH6 30 V 0.0033 80 A 1 1 STu150N3LLH6 30 V 0.0033 80 A IPAK DPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) 3 2 Hi... See More ⇒
9.3. Size:1007K st
stb155n3lh6 std155n3lh6.pdf
STB155N3LH6 STD155N3LH6 N-channel 30 V, 2.4 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET Features RDS(on) Order codes VDSS ID(1) PTOT max TAB STB155N3LH6 30 V 3.0 m 80 A 110 W TAB STD155N3LH6 1. Current limited by package 3 3 1 1 100% avalanche tested DPAK Logic level drive D PAK Applications Switching applications Automotive Fig... See More ⇒
9.4. Size:331K st
std15nf10.pdf
STD15NF10 N-channel 100 V, 0.060 , 23 A, DPAK low gate charge STripFET II Power MOSFET Features VDSSS RDS(on) max ID Type STD15NF10 100 V ... See More ⇒
9.5. Size:943K st
stb155n3h6 std155n3h6.pdf
STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET Features Order codes VDSS RDS(on) max ID STB155N3H6 30 V ... See More ⇒
9.6. Size:868K st
stb15n65m5 std15n65m5.pdf
STB15N65M5, STD15N65M5 Datasheet N-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packages Features TAB TAB VDS @ RDS(on) max. ID Order code TJmax 3 2 2 1 3 STB15N65M5 1 710 V 0.34 11 A D2PAK DPAK STD15N65M5 Extremely low RDS(on) D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval... See More ⇒
9.7. Size:168K st
std15n06-.pdf
STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06 60 V ... See More ⇒
9.8. Size:329K st
std15nf10t4.pdf
STD15NF10 N-channel 100 V, 0.060 , 23 A, DPAK low gate charge STripFET II Power MOSFET Features VDSSS RDS(on) max ID Type STD15NF10 100 V ... See More ⇒
9.9. Size:1087K st
std15n65m5.pdf
STB15N65M5, STD15N65M5 N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in D2PAK and DPAK packages Datasheet production data Features VDS @ RDS(on) Order codes ID TJmax max TAB STB15N65M5 TAB 710 V ... See More ⇒
9.10. Size:788K st
std15n50m2ag.pdf
STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS... See More ⇒
9.11. Size:140K st
std15n.pdf
STD15N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06L 60 V ... See More ⇒
9.12. Size:148K samhop
stu15n20 std15n20.pdf
STU15N20 Green Product STD15N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 200V 15A 190 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK AB... See More ⇒
9.13. Size:98K samhop
stu1530pl std1530pl.pdf
S TU/D1530P L S amHop Microelectronics C orp. P reliminary Mar.28 2004 P-Channel E nhancement Mode MOS FE T PR ODUC T S UMMAR Y FEATUR ES R DS (ON) ( m ) Max VDS S ID S uper high dense cell design for low R DS (ON). R ugged and reliable. 45 @ VGS =-10V -30V -20A TO-252 and TO-251 Package. 60 @ VGS = -4.5V D D G G S SDU SERIES SDD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S ABS... See More ⇒
9.14. Size:149K samhop
stu15l01 std15l01.pdf
Green Product STU/D15L01 a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 145 @ VGS=10V TO-252 and TO-251 Package. 15A 100V 195 @ VGS=4.5V Halogen free. G S STU SERIES STD SERIES ( ) TO - 252AA D- PA... See More ⇒
9.15. Size:208K inchange semiconductor
std15nf10t4.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD15NF10T4 FEATURES With To-252(DPAK) package Application oriented characterization Excellent switching performance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
Detailed specifications: STD12NF06-1, STD12NF06L-1, STD12NF06LT4, STD12NM50N, STD130N4F6AG, STD13N60M2, STD13N65M2, STD13NM60ND, K4145, STD150NH02LT4, STD15N65M5, STD15NF10T4, STD16N50M2, STD16N60M2, STD16N65M2, STD16NF06L-1, STD16NF06LT4
Keywords - STD150NH02L-1 MOSFET specs
STD150NH02L-1 cross reference
STD150NH02L-1 equivalent finder
STD150NH02L-1 pdf lookup
STD150NH02L-1 substitution
STD150NH02L-1 replacement
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